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|Title:||Characterization of thermally evaporated AgGaTe2 Films|
Bedi, R K
|Abstract:||Silver gallium telluride (AgGaTe2) films were prepared by thermal evaporation technique in vacuum of the order of 10-5 torr. onto the glass substrate kept at different temperatures. The electrical conductivity, Hall coefficient and carrier concentration of these films have been investigated in the temperature range 193-413 K. The films appear to be p-type thus indicating holes as dominant charge carriers and the films show comparatively higher conductivity at higher substrate temperature. An increase in temperature increases the electrical conductivity, while decrease in Hall coefficient with temperature has been observed. Scanning electron micrographs show an increase in grain size with substrate temperature thus indicating it to be a more ordered system. Optical band gap of the films lies in the range 1.58-1.89 eV.|
|Appears in Collections:||IJEMS Vol.07(5-6) [October-December 2000]|
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