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|Title:||Preparation and characterization of lanthanum sulphide thin films deposited by Spray Pyrolysis Technique|
|Authors:||Bagde, G D|
Yermune, V S
Lokhande, C D
|Abstract:||Formation of lanthanum sulphide (LaS) thin films is important in the view of its photosensitive and thermoelectric properties. LaS thin films have been deposited onto preheated glass substrates by spray pyrolysis method using equimolar (0.05 M) aqueous sol ution or lanthanum chloride (LaCl3.7H2O) and thioacetamide (CH3 CS-NH2). The thickness or LaS film was round to increase with deposition time. The thin films were characterized by X-ray dirrraction, optical absorption, optical micrograph, electrical resistivity and thermo-emF measurements. The XRD studies reveal that the deposited LaS material is polycrystalline. The optical absorption studies reveal that the material formed has direct band gap of 2.5 eV. The electrical resistivity is of the order or 104 Ω cm. The activation energy is round to be 0.86 eV. From thermo-emf study, it is concluded that LaS is a p-type semiconductor.|
|Appears in Collections:||IJEMS Vol.07(5-6) [October-December 2000]|
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