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dc.contributor.authorPathan, H M-
dc.contributor.authorSankapal, B R-
dc.contributor.authorLokhande, C D-
dc.date.accessioned2013-12-03T05:49:54Z-
dc.date.available2013-12-03T05:49:54Z-
dc.date.issued2001-10-
dc.identifier.issn0975-1017 (Online); 0971-4588 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/24436-
dc.description271-274en_US
dc.description.abstractSemiconducting CdIn2S4 thin films have been deposited on amorphous glass substrates using a chemical method, successive ionic layer adsorption and reaction (SILAR). The influence of preparative parameters on the properties of the films has been studied. The thickness of the film is found to be 0.44 μm. The films have been characterized for structural, optical and electrical transport properties by means of X-ray diffraction, optical absorption, electrical resistivity and thermoelectric power measurements techniques. The films are found to be nanocrystalline with optical bandgap 2.12 eV. The electrical resistivity was of the order of 104 Ω-cm.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJEMS Vol.08(5) [October 2001]en_US
dc.titlePreparation of CdIn2S4 thin films by chemical methoden_US
dc.typeArticleen_US
Appears in Collections:IJEMS Vol.08(5) [October 2001]

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