Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/24436
Title: Preparation of CdIn2S4 thin films by chemical method
Authors: Pathan, H M
Sankapal, B R
Lokhande, C D
Issue Date: Oct-2001
Publisher: NISCAIR-CSIR, India
Abstract: Semiconducting CdIn2S4 thin films have been deposited on amorphous glass substrates using a chemical method, successive ionic layer adsorption and reaction (SILAR). The influence of preparative parameters on the properties of the films has been studied. The thickness of the film is found to be 0.44 μm. The films have been characterized for structural, optical and electrical transport properties by means of X-ray diffraction, optical absorption, electrical resistivity and thermoelectric power measurements techniques. The films are found to be nanocrystalline with optical bandgap 2.12 eV. The electrical resistivity was of the order of 104 Ω-cm.
Page(s): 271-274
URI: http://hdl.handle.net/123456789/24436
ISSN: 0975-1017 (Online); 0971-4588 (Print)
Appears in Collections:IJEMS Vol.08(5) [October 2001]

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