Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/24364
Title: Growth of multilayer Bi2Se3-Sb2Se3 thin films by SILAR technique
Authors: Sankapal, B R
Pathan, H M
Lokhande, C D
Issue Date: Aug-2001
Publisher: NISCAIR-CSIR, India
Abstract: The successive ionic layer adsorption and reaction (SILAR) technique is well suited for producing large area thin films, as they are required in solar energy related applications. It is applied for the growth of multilayer Bi2Se3-Sb2Se3 thin films onto glass substrates. The preparative parameters are optimized to get multimonolayers of Bi2Se3-Sb2Se3 of terminal thickness ~ 0.185 μm. Structure, surface morphology, optical band gaps and electrical resistivity of the Bi2Se3-Sb2Se3 thin films are studied. Structural study by X-ray diffraction shows that multilayer Bi2Se3-Sb2Se3 thin film formation is possible by SILAR technique. Scanning electron microscopy and atomic force microscopy studies show that films formed are nanocrystalline. The optical band gap was estimated to be 1.57 eV using optical absorption studies, which lies between the individual band gaps of Bi2Se3 and Sb2Se3. The dark electrical resistivity is found to be of the order of 105 Ω-cm.
Page(s): 223-227
URI: http://hdl.handle.net/123456789/24364
ISSN: 0975-1017 (Online); 0971-4588 (Print)
Appears in Collections:IJEMS Vol.08(4) [August 2001]

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