Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/2343
Title: Deposition of low stress polysilicon thin films using low-pressure chemical vapour deposition
Authors: Kumar, Mahesh
Parsad, Mahant
Goswami, Niranjana
Arora, Anil
Pant, B D
Dwivedi, V K
Keywords: Polysilicon thin films
Thin films
MEMS
Chemical vapour deposition
Issue Date: Apr-2007
Publisher: CSIR
Series/Report no.: B81B7/02, C30B
Abstract: The deposition of polysilicon thin films on silicon wafers using low-pressure chemical vapour deposition (LPCVD) was carried out and the process parameters were optimized to obtain normal and low stress films. The films of thickness 150 nm to 2 microns were deposited on 4" and 6" silicon wafers and the thickness uniformity was measured using Dektak 6M surface profiler. The thickness variation across the wafer was found to be in 5-10% range. Stress measurements were carried out using X-ray diffraction method. We were able to deposit low stress films with stress ~14 MPa. The quality of the films was found to be good and they were used in fabrication of MEMS based silicon devices.
Description: 400-402
URI: http://hdl.handle.net/123456789/2343
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.45(04) [April 2007]

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