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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.45 [2007] >
IJPAP Vol.45(04) [April 2007] >
| Title: | Piezoresistive effects of resonant tunneling structure for application in micro-sensors |
| Authors: | Zhang, Wendong
Xue, Chenyang
Xiong, Jijun
Xie, Bin
Wei, Tianjie
Chen, Yong |
| Keywords: | Resonant tunneling
Piezoresistor
Double-barrier microstructure
Superlattice |
| Issue Date: | Apr-2007 |
| Publisher: | CSIR |
| IPC Code: | B06B1/06; C30B |
| Abstract: | In this paper, piezoresistive properties of resonant tunneling structure made of undoped InGaAs/AlAs double-barrier quantum layers have been experimentally investigated, and the resonant tunneling structure was grown by molecular beam epitaxy (MBE) on semi-insulation (001)-oriented GaAs substrate. We found that the piezoresistivity of such quantum layers is about one order higher than that of the commonly used silicon structures. Micro accelerometers based on InGaAs/AlAs double-barrier resonant tunneling structures have also been designed and fabricated by control hole technique. |
| Page(s): | 294-298 |
| ISSN: | 0019-5596 |
| Source: | IJPAP Vol.45(04) [April 2007]
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