Please use this identifier to cite or link to this item:
http://nopr.niscair.res.in/handle/123456789/2339
Title: | Piezoresistive effects of resonant tunneling structure for application in micro-sensors |
Authors: | Zhang, Wendong Xue, Chenyang Xiong, Jijun Xie, Bin Wei, Tianjie Chen, Yong |
Keywords: | Resonant tunneling;Piezoresistor;Double-barrier microstructure;Superlattice |
Issue Date: | Apr-2007 |
Publisher: | CSIR |
IPC Code: | B06B1/06; C30B |
Abstract: | In this paper, piezoresistive properties of resonant tunneling structure made of undoped InGaAs/AlAs double-barrier quantum layers have been experimentally investigated, and the resonant tunneling structure was grown by molecular beam epitaxy (MBE) on semi-insulation (001)-oriented GaAs substrate. We found that the piezoresistivity of such quantum layers is about one order higher than that of the commonly used silicon structures. Micro accelerometers based on InGaAs/AlAs double-barrier resonant tunneling structures have also been designed and fabricated by control hole technique. |
Page(s): | 294-298 |
URI: | http://hdl.handle.net/123456789/2339 |
ISSN: | 0019-5596 |
Appears in Collections: | IJPAP Vol.45(04) [April 2007] |
Files in This Item:
File | Description | Size | Format | |
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IJPAP 45(4) 294-298.pdf | 125.05 kB | Adobe PDF | View/Open |
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