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http://nopr.niscair.res.in/handle/123456789/2339| Title: | Piezoresistive effects of resonant tunneling structure for application in micro-sensors |
| Authors: | Zhang, Wendong Xue, Chenyang Xiong, Jijun Xie, Bin Wei, Tianjie Chen, Yong |
| Keywords: | Resonant tunneling;Piezoresistor;Double-barrier microstructure;Superlattice |
| Issue Date: | Apr-2007 |
| Publisher: | CSIR |
| IPC Code: | B06B1/06; C30B |
| Abstract: | In this paper, piezoresistive properties of resonant tunneling structure made of undoped InGaAs/AlAs double-barrier quantum layers have been experimentally investigated, and the resonant tunneling structure was grown by molecular beam epitaxy (MBE) on semi-insulation (001)-oriented GaAs substrate. We found that the piezoresistivity of such quantum layers is about one order higher than that of the commonly used silicon structures. Micro accelerometers based on InGaAs/AlAs double-barrier resonant tunneling structures have also been designed and fabricated by control hole technique. |
| Page(s): | 294-298 |
| URI: | http://hdl.handle.net/123456789/2339 |
| ISSN: | 0019-5596 |
| Appears in Collections: | IJPAP Vol.45(04) [April 2007] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 45(4) 294-298.pdf | 125.05 kB | Adobe PDF | View/Open |
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