Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/2339
Title: Piezoresistive effects of resonant tunneling structure for application in micro-sensors
Authors: Zhang, Wendong
Xue, Chenyang
Xiong, Jijun
Xie, Bin
Wei, Tianjie
Chen, Yong
Keywords: Resonant tunneling
Piezoresistor
Double-barrier microstructure
Superlattice
Issue Date: Apr-2007
Publisher: CSIR
Series/Report no.: B06B1/06; C30B
Abstract: In this paper, piezoresistive properties of resonant tunneling structure made of undoped InGaAs/AlAs double-barrier quantum layers have been experimentally investigated, and the resonant tunneling structure was grown by molecular beam epitaxy (MBE) on semi-insulation (001)-oriented GaAs substrate. We found that the piezoresistivity of such quantum layers is about one order higher than that of the commonly used silicon structures. Micro accelerometers based on InGaAs/AlAs double-barrier resonant tunneling structures have also been designed and fabricated by control hole technique.
Description: 294-298
URI: http://hdl.handle.net/123456789/2339
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.45(04) [April 2007]

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