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|Title:||Measurement of novel micro bulk defects in semiconductive materials based on Mie scatter|
|Keywords:||Non-destructive detection;Semiconductive material;Micro bulk defect;Generalized Lorenz;Mie Theory (GLMT);Near-infrared laser;Scattering|
|Abstract:||This paper introduces a new micro bulk defects measurement method in semiconductive materials, which scales the defects by analyzing scattering light distribute based on Generalized Lorenz and Mie Theory (GLMT). A method named character recognition and pick up two characters as defect criterions have been presented. Moreover, a set of experimental apparatus is built to prove the detect method and defect criterions. The micro bulk defects in semiconductive materials have been detected experimentally.|
|Appears in Collections:||IJPAP Vol.45(04) [April 2007]|
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