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|Title:||MEMS prototyping using RF sputtered films|
|Keywords:||RF sputtering;Dielectric films;Piezoelectric films;Perfect convex corner;MEMS microstructures|
|IPC Code:||G01L 9/06, B81B7/02|
|Abstract:||In the present work, the deposition and characterization of dielectric, piezoelectric, semiconductor and conductor films by RF diode / RF magnetron sputtering process for applications in MEMS fabrication have been reported. Thin films of silicon dioxide, silicon nitride, amorphous silicon, zinc oxide and lanthanum doped lead zirconate titanate (PLZT) were prepared by RF sputtering process and extensively characterized for their structural, optical, and electrical properties. Thin films of conducting materials which are commonly used in MEMS fabrication (Cr, Au, Ti, and Pt) were also prepared by the same process. A few applications of these films in MEMS are demonstrated. It has been concluded that RF sputtering can be advantageously used for rapid prototyping of MEMS and demonstrating new ideas especially by researchers who do not have access to a well-established MEMS foundry.|
|Appears in Collections:||IJPAP Vol.45(04) [April 2007]|
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