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IJPAP Vol.45 [2007] >
IJPAP Vol.45(03) [March 2007]  >


Title: Temperature dependent analysis of refractive index, band gap and recombination coefficient in nitride semiconductor lasers
Authors: Gaikwad, S A
Samuel, E P
Patil, D S
Gautam, D K
Keywords: Recombination coefficient
Band gap
Refractive index
Nitrides
Semiconductor lasers
Issue Date: Mar-2007
Publisher: CSIR
IPC CodeH01S 5/00
Abstract: Temperature dependent analysis of recombination coefficient, band gap and refractive index has been carried out to explore applicability of nitride lasers at higher temperatures. To estimate recombination coefficient at various temperatures Shockley-van Roosbroeck model has been used. Our results reveal that refractive index increases in linear manner with temperature and indium mole fraction in InGaN. However, refractive index was found to be decreasing with Al mole fraction and temperature in non-linear manner. The band gap deduced from our analysis was found to be increasing with Al mole fraction and decreasing with In mole fraction and therefore, these alloys provide better opportunity to form effective heterostructures with GaN. The recombination coefficient analysed, was observed to be decreasing non-linearly with band gap and temperature for AlGaN. However, in case of InGaN, the recombination coefficient shows linear increase with band gap and non-linear decrease with temperature.
Page(s): 238-242
ISSN: 0019-5596
Source:IJPAP Vol.45(03) [March 2007]

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