Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/2288
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dc.contributor.authorPandya, Ankur-
dc.contributor.authorJha, Prafulla K-
dc.date.accessioned2008-10-22T09:01:23Z-
dc.date.available2008-10-22T09:01:23Z-
dc.date.issued2007-01-
dc.identifier.issn0019-5596-
dc.identifier.urihttp://hdl.handle.net/123456789/2288-
dc.description96-99en_US
dc.description.abstractThe carrier transport properties for two dimensional diluted Ga₍₁₋x₎MnxN have been calculated via electron acoustical phonon interaction on the basis of deformation potential coupling mechanism for the different concentrations of Mn (x ≤10%) at different temperatures. The acoustic phonon scattering rate increases with the energy and decreases with the manganese concentration. The contribution of acoustic phonons in the variation of resistivity for different manganese concentrations and threshold thermal energy have also been determined. The temperature and concentration both affect the acoustic phonon scattering rate. Therefore, the resistivity varies due to the effect of these on the acoustical deformation potential (ADP).en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.relation.ispartofseriesG10K11/00en_US
dc.sourceIJPAP Vol.45(1) [January 2007]en_US
dc.subjectPhonons interactionen_US
dc.subjectDiluted magnetic semiconductoren_US
dc.titlePhonon interaction and variation of deformation potential with temperature and concentration in diluted Ga₍₁₋x₎MnxN quantum wellen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.45(01) [January 2007]

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