Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/20889
Title: Effect of inversion layer and oxide layer thickness on the performance of PX-Si TFT devices
Authors: Joshi, D P
Sharma, Kiran
Gill, F S
Keywords: Thin film transistors;Transistors;Integrated circuits;Drain current
Issue Date: Sep-2013
Publisher: NISCAIR-CSIR, India
Abstract: In the present paper, the dependence of transfer characteristics of PX-Si TFT devices on gate oxide thickness (tox) and inversion layer thickness (tsi) has been investigated theoretically by considering a new Gaussian energy distribution of GB trapping states. The dependence of drain current (ID) and GB space charge potential barrier height (qVg) of PX-Si TFT on gate voltage (VGS) at different inversion layer thickness qVg, and oxide layer thickness has also been studied. It is observed that the drain current increases on decreasing the thickness of oxide layer and inversion layer.
Page(s): 638-641
URI: http://hdl.handle.net/123456789/20889
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.51(09) [September 2013]

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