NISCAIR Online Periodicals Repository

NISCAIR ONLINE PERIODICALS REPOSITORY (NOPR)  >
NISCAIR PUBLICATIONS >
Research Journals >
Indian Journal of Engineering and Materials Sciences (IJEMS) >
IJEMS Vol.15 [2008] >
IJEMS Vol.15(3) [June 2008] >


Title: n-HgxCd₁₋xSe thin film electrodes for photoelectrochemical applications
Authors: Pujari, V B
Dhage, D J
Deshmukh, L P
Keywords: MCS
PEC cells
Electrical and optical responses
Issue Date: Jun-2008
Publisher: CSIR
Abstract: Mercury cadmium selenide (HgxCd₁₋xSe) thin film semiconductor photoelectrodes of various compositions (0 ≤ x ≤ 0.2) are fabricated on glass and stainless steel substrates by a simple chemical bath technique. The different preparation parameters and deposition conditions are optimized to yield quality samples. By increasing the Hg-content in host CdSe- lattice, an optical gap (Eg) of the alloyed semiconductor is reduced from 1.72 to 1.06 eV, which corresponds to maximum absorption in the visible and near infra-red regions of solar spectrum. The photoelectrochemical (PEC) cells are then fabricated and studied for their performance through the various parameters. It has been observed that the flat band potential (Vfb) increased with electrode composition, x and reached a maximum at x = 0.01. The variations in the photopotential (Vph) and photocurrent (Iph) are studied as a function of the electrode composition. Both Vph and Iph are found to be boosted significantly and are explained on the basis of the electrode materials properties.
Page(s): 275-280
ISSN: 0971-4588
Source: IJEMS Vol.15(3) [June 2008]

Files in This Item:

File Description SizeFormat
IJEMS 15(3) 275-280.pdf699.92 kBAdobe PDFView/Open
 Current Page Visits: 845 
Recommend this item

 

National Knowledge Resources Consortium |  NISCAIR Website |  Contact us |  Feedback

Disclaimer: NISCAIR assumes no responsibility for the statements and opinions advanced by contributors. The editorial staff in its work of examining papers received for publication is helped, in an honorary capacity, by many distinguished engineers and scientists.

CC License Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India

Copyright © 2012 The Council of Scientific and Industrial Research, New Delhi. All rights reserved.

Powered by DSpace Copyright © 2002-2007 MIT and Hewlett-Packard | Compliant to OAI-PMH V 2.0

Home Page Total Visits: 637087 since 06-Feb-2009  Last updated on 15-Dec-2014Webmaster: nopr@niscair.res.in