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IJEMS Vol.14(3) [June 2007] >


Title: Rutherford back scattering and optical band gap of In/Sb thin films
Authors: Mangal, R K
Vijay, Y K
Avasthi, D K
Shekhar, B R
Issue Date: Jun-2007
Publisher: CSIR
IPC CodeH01C17/075
Abstract: Thin films having constant thickness of indium over varying thickness of antimony are deposited on glass substrates using vacuum evaporation method. Films are irradiated by Ag¹²⁺ heavy ions of energy 160 MeV at the fluence 2.2×10¹³ ons/cm². The optical absorption spectra have been recorded at room temperature of as-deposited and Ag¹²⁺ ion beam irradiated samples which show mixing of In/Sb bilayer. Rutherford back scattering (RBS) spectra also carried out using ⍺-particles of energy 3 MeV. The optical band gap data of irradiated films found in the range of In/Sb semiconductor. RBS spectra also support mixing of bilayer. These results show mixing of In/Sb bilayer by swift heavy ion beam irradiation processes.
Page(s): 253-256
ISSN: 0971-4588
Source:IJEMS Vol.14(3) [June 2007]

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