Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/18061
Title: Electronic structure of SRY gene
Authors: Kishor, Shyam
Bakhshi, A K
Issue Date: Apr-2005
Publisher: NISCAIR-CSIR, India
Abstract: The electronic density of states (DOS) distributions of SRY gene present on Y chromosome of homo-sapiens obtained with the help of negative factor counting (NFC) method using tight binding approximation are presented. The Y chromosome-specific gene SRY is one of the key genes involved in human sex determination. Band structure results of polyadenine (poly (A)); polyguanine (poly (G)); polycytocine (poly (C)) and poly thymine (poly (T)) obtained on the basis of ab initio Hartree Fock crystal orbital method using both minimal basis and double zeta basis sets have been used as input to calculate these DOS. The calculated large values of band gap obtained for these systems are comparable to those of aperiodic DNA base stacks and rule out the  possibility of intrinsic conduction in them.
Page(s): 673-677
URI: http://hdl.handle.net/123456789/18061
ISSN: 0975-0975(Online); 0376-4710(Print)
Appears in Collections:IJC-A Vol.44A(04) [April 2005]

Files in This Item:
File Description SizeFormat 
IJCA 44A(4) 673-677.pdf968.44 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.