Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/16559
Title: Fabrication and characterization of n-InSb thin film of different thicknesses
Authors: Vishwakarma, S R
Kumar, Anil
Tripathi, R S N
Rahul
Das, Sasmita
Keywords: n-InSb thin films;Grain size;Resistivity;Carrier concentration;Direct band gap
Issue Date: Apr-2013
Publisher: NISCAIR-CSIR, India
Abstract: The n-type indium antimonide thin films of the thickness 300-1200 nm were fabricated by electron beam evaporation technique on ultrasonically cleaned glass substrates at room temperature using optimized starting material. The X-ray diffraction patterns reveal that films are polycrystalline with zincblende structure. The dependence of structural, electrical and optical properties on film thickness was studied and optimized the film thickness. The Scanning Electron Microscope (SEM) micrographs show that the films are smooth and compact with larger grains. The electrical resistivity decreases (0.66-0.13)10-2 ohm.cm with increase of film thickness. These fabricated thin films show semiconducting behaviour because its conductivity increases with increase of temperature. The Hall effect measurement indicates that the films are of n-type having carrier concentration (0.45-0.17)1018 cm-3 and mobility (2.11-30.42)103 cm2/V.s. The direct band gap has been calculated by Fourier Transform Infrared (FTIR) transmission spectra recorded at room temperature which decreases from 0.22 to 0.19 eV with increase of films thickness.
Page(s): 260-266
URI: http://hdl.handle.net/123456789/16559
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.51(04) [April 2013]

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