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dc.contributor.authorKumar, Manjul-
dc.contributor.authorGajjar, P N-
dc.contributor.authorThakore, B Y-
dc.contributor.authorJani, A R-
dc.date.accessioned2008-07-01T11:03:11Z-
dc.date.available2008-07-01T11:03:11Z-
dc.date.issued2008-06-
dc.identifier.issn0019-5596-
dc.identifier.urihttp://hdl.handle.net/123456789/1626-
dc.description394-396en_US
dc.description.abstractThe temperature dependent electrical resistivity of liquid Cd₀․₆Te₀․₄ alloys has been studied theoretically by employing Faber-Ziman formula. Also, the Faber-Ziman formulation is used to generate the partial structure factor of the liquid Cd₀․₆Te₀․₄ alloys at 1062ºC. The electron-ion interaction is incorporated through a newly proposed local model potential alongwith Ichimaru-Utsumi (IU) dielectric screening function. Good agreement is achieved between the presently calculated results of resistivity with the experimental findings. Resistivity of liquid Cd₀․₆Te₀․₄ shows a semiconducting behaviour in the liquid phase. Thus, the resistivity data for Cd-Te system are in qualitative agreement with the nearly-free electron picture.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.sourceIJPAP Vol.46(6) [June 2008]en_US
dc.subjectSemiconductorsen_US
dc.subjectLiquid alloysen_US
dc.subjectElectronic transport propertiesen_US
dc.subjectLiquid structuresen_US
dc.subjectPseudopotentialen_US
dc.titleElectronic transport property of liquid Cd-Te alloysen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.46(06) [June 2008]

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