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|Title:||Role of semiconducting oxide (CuO) and -irradiation on the thermal decomposition of barium oxalate|
|Abstract:||Influence of the semiconducting oxide, CuO, (1.0-10.0 mol%) and -irradiation (0.5-5.0×102 KGy) on the thermal decomposition of barium oxalate has been studied by the gas evolution method. The process occurs through initial gas evolution followed by a sigmoidal zone consisting of acceleratory and decay periods. Lower concentrations of the additive reduce the value of fraction decomposed, , and decrease the rate of reaction in the acceleratory and decay stages, the effect being more prominent in the case of former. However, reaction rate increases with increasing concentration of the additive. The extent as well as the rate of decomposition in the acceleratory stage is facilitated on irradiation but the reverse takes place in the decay period, the effect being higher at higher doses.|
|Appears in Collections:||IJC-A Vol.38A(10) [October 1999]|
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|IJCA 38A(10) 1047-1050.pdf||792.65 kB||Adobe PDF||View/Open|
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