Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/15947
Title: Role of semiconducting oxide (CuO) and -irradiation on the thermal decomposition of barium oxalate
Authors: Routra, N
Bhatta, D
Issue Date: Oct-1999
Publisher: NISCAIR-CSIR, India
Abstract: Influence of the semiconducting oxide, CuO, (1.0-10.0 mol%) and -irradiation (0.5-5.0×102 KGy) on the thermal decomposition of barium oxalate has been studied by the gas evolution method. The process occurs through initial gas evolution followed by a sigmoidal zone consisting of acceleratory and decay periods. Lower concentrations of the additive reduce the value of fraction decomposed, , and decrease the rate of reaction in the acceleratory and decay stages, the effect being more prominent in the case of former. However, reaction rate increases with increasing concentration of the additive. The extent as well as the rate of decomposition in the acceleratory stage is facilitated on irradiation but the reverse takes place in the decay period, the effect being higher at higher doses.
Page(s): 1047-1050
URI: http://hdl.handle.net/123456789/15947
Appears in Collections:IJC-A Vol.38A(10) [October 1999]

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