Please use this identifier to cite or link to this item:
|Title:||Comparative analysis of Ni-Cr/Pt thin film resistors on silicon and GaAs substrates for IPD technology|
|Keywords:||Integrated passive device;Thin film resistor;RF cluster sputtering system|
|Abstract:||The Ni-Cr/Pt thin film resistors (TFRs) deposited on silicon and GaAs substrates using the RF cluster sputtering system are comparatively analyzed in electrical and physical properties for integrated passive device (IPD) technology. In order to find the suitability of these substrates, the electrical and morphology characterizations for pure and thermally annealed samples have been demonstrated. The pure and the annealed samples on GaAs substrate have shown very less variation of resistivity from room temperature to 200ºC. But the variation of resistivity on silicon substrate has changed much for different annealed temperatures. This is due to the mobility variation and the inter-diffusion of silicon with the other metals. This study presents that the resistive Ni-Cr/Pt layers on the GaAs substrate shows more stability, less inter-diffusion and less formation of voids compared to the resistive layers on silicon substrate.|
|ISSN:||0975-1017 (Online); 0971-4588 (Print)|
|Appears in Collections:||IJEMS Vol.19(5) [October 2012]|
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.