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Indian Journal of Engineering and Materials Sciences (IJEMS) >
IJEMS Vol.19 [2012] >
IJEMS Vol.19(5) [October 2012] >
| Title: | Comparative analysis of Ni-Cr/Pt thin film resistors on silicon and GaAs substrates for IPD technology |
| Authors: | Wang, Cong
Kim, Nam-Young |
| Keywords: | Integrated passive device
Thin film resistor
RF cluster sputtering system |
| Issue Date: | Oct-2012 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | The Ni-Cr/Pt thin film resistors (TFRs)
deposited on silicon and GaAs substrates using the RF cluster sputtering system
are comparatively analyzed in electrical
and physical properties for integrated passive device (IPD) technology. In order to find the suitability of these
substrates, the electrical and morphology characterizations for pure and
thermally annealed samples have been demonstrated. The pure and the annealed
samples on GaAs substrate have shown very less variation of resistivity from
room temperature to 200ºC. But the variation of resistivity on silicon
substrate has changed much for different annealed temperatures. This is due to
the mobility variation and the inter-diffusion of silicon with the other
metals. This study presents that the
resistive Ni-Cr/Pt layers on the GaAs substrate shows more stability, less inter-diffusion and less formation of voids
compared to the resistive layers on silicon substrate.
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| Page(s): | 304-306 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Source: | IJEMS Vol.19(5) [October 2012]
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