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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.50 [2012] >
IJPAP Vol.50(12) [December 2012] >
| Title: | Effect of growth interruption on photoluminescence of self-assembled InAs/GaAs quantum dot heterostructures |
| Authors: | Wu, Ya-Fen |
| Keywords: | Quantum dot
Growth interruption
Temperature dependent photoluminescence
Size uniformity |
| Issue Date: | Dec-2012 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | The effects of
growth interruption (GI) on self-assembled InAs/GaAs quantum dot (QD)
heterostructures have been presented. Samples with different GI times were
grown on GaAs substrate by metal-organic chemical vapour epitaxy. Photoreflectance
and temperature dependent photoluminescence (PL) spectra from the samples were
measured. It is found that increasing GI time during InAs QDs formation induces
a larger dot size and a higher QD size uniformity. The carrier dynamics in QD
system has been investigated in detail by analyzing the PL spectra. With
increasing temperature, thermal redistribution effect among dots is evident for
the sample with shorter GI time, leading to a quick red-shift of the PL peak
energy and a reduction of the PL line width in mid-temperature range. On the
other hand, for sample with longer time, such effect is weak and overcome by
the electron-phonon scattering effect, which is consistent with the observed
monotonically increasing linewidth of PL spectra with temperature. |
| Page(s): | 922-927 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.50(12) [December 2012]
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