Please use this identifier to cite or link to this item:
|Title:||Effect of growth interruption on photoluminescence of self-assembled InAs/GaAs quantum dot heterostructures|
|Keywords:||Quantum dot;Growth interruption;Temperature dependent photoluminescence;Size uniformity|
|Abstract:||The effects of growth interruption (GI) on self-assembled InAs/GaAs quantum dot (QD) heterostructures have been presented. Samples with different GI times were grown on GaAs substrate by metal-organic chemical vapour epitaxy. Photoreflectance and temperature dependent photoluminescence (PL) spectra from the samples were measured. It is found that increasing GI time during InAs QDs formation induces a larger dot size and a higher QD size uniformity. The carrier dynamics in QD system has been investigated in detail by analyzing the PL spectra. With increasing temperature, thermal redistribution effect among dots is evident for the sample with shorter GI time, leading to a quick red-shift of the PL peak energy and a reduction of the PL line width in mid-temperature range. On the other hand, for sample with longer time, such effect is weak and overcome by the electron-phonon scattering effect, which is consistent with the observed monotonically increasing linewidth of PL spectra with temperature.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.50(12) [December 2012]|
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.