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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.50 [2012] >
IJPAP Vol.50(09) [September 2012] >
| Title: | Effects of grain boundaries on the performance of polycrystalline silicon solar cells |
| Authors: | Joshi, D P
Sharma, Kiran |
| Keywords: | Grain boundary
Solar cells
Polycrystalline silicon |
| Issue Date: | Sep-2012 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | A comprehensive
carrier recombination model under optical illumination near grain boundaries
(GBs) is proposed by considering the asymmetric Gaussian energy distribution of
GB interface states model. A new recombination velocity S(Ln) is
proposed to study the dependence of effective diffusion length of minority
carriers on grain size and GB interface state density. The dependence of GB
space charge potential barrier height (qVg),
the recombination velocities, and polycrystalline silicon (PX-Si) solar cell
parameters on grain size, illumination level, and GB interface state density
have also been studied. It is observed that the efficiency of solar cells is
mainly determined by the potential barrier height qVg. Considering the effect of vertical GBs in the
junction depletion region of a solar cell, it is also observed that their
effect is smaller in the small grain size range as compared to that in the
large grain size range. A reasonably good agreement is obtained between the
theoretical predictions and the available experimental data. |
| Page(s): | 661-669 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.50(09) [September 2012]
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