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IJPAP Vol.50 [2012] >
IJPAP Vol.50(09) [September 2012] >
| Title: | Surface modification of GaAs induced by argon ion implantation |
| Authors: | Hussain, S
Gayen, R N
Dutt, M B
Pal, A K |
| Keywords: | III–V Semiconductor
Ion implantation
GaAs |
| Issue Date: | Sep-2012 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Surface modification
of GaAs (100) due to Ar+ ion bombardment has been studied by
measuring optical, AFM, SEM, Raman and PL measurements. GaAs was bombarded with
250 keV argon ions with three different doses of 1×1016 cm-2, 1×1015 cm-2 and 1×1014 cm-2. AFM studies indicated that the
surface became rougher with ion bombardment (dose) and the surface roughness
increased from 0.706 nm for un-bombarded GaAs to 3.671 nm for bombarded
samples. Peaks shifted to lower 2θ values for bombarded samples. The full width
at half maxima (FWHM) of the XRD peaks for reflections from (200) and (400)
planes of GaAs increased for films bombarded with increased Ar+
fluxes and increase in FWHM for (400) plane peak is quite significant. The LO
peak at ~290 cm-1 of the Raman spectra shifted to lower wave number and became
broader with the Ar+ flux. PL spectra showed a strong luminescence
peak at ~ 1.5 eV followed by two smaller peaks located at ~1.40 eV and 1.1 eV.
Photoluminescence bands at ~ 1.5 eV band were assigned to annihilation of free
and localized excitons by small donors and acceptors. The shoulders at ~1.48 eV
and ~1.47 eV represented the transition due to free-to-bound recombination and
the defects GaAs. |
| Page(s): | 650-656 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.50(09) [September 2012]
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