Please use this identifier to cite or link to this item:
Title: Surface modification of GaAs induced by argon ion implantation
Authors: Hussain, S
Gayen, R N
Dutt, M B
Pal, A K
Keywords: III–V Semiconductor;Ion implantation;GaAs
Issue Date: Sep-2012
Publisher: NISCAIR-CSIR, India
Abstract: Surface modification of GaAs (100) due to Ar+ ion bombardment has been studied by measuring optical, AFM, SEM, Raman and PL measurements. GaAs was bombarded with 250 keV argon ions with three different doses of 1×1016 cm-2, 1×1015 cm-2 and 1×1014 cm-2. AFM studies indicated that the surface became rougher with ion bombardment (dose) and the surface roughness increased from 0.706 nm for un-bombarded GaAs to 3.671 nm for bombarded samples. Peaks shifted to lower 2θ values for bombarded samples. The full width at half maxima (FWHM) of the XRD peaks for reflections from (200) and (400) planes of GaAs increased for films bombarded with increased Ar+ fluxes and increase in FWHM for (400) plane peak is quite significant. The LO peak at ~290 cm-1 of the Raman spectra shifted to lower wave number and became broader with the Ar+ flux. PL spectra showed a strong luminescence peak at ~ 1.5 eV followed by two smaller peaks located at ~1.40 eV and 1.1 eV. Photoluminescence bands at ~ 1.5 eV band were assigned to annihilation of free and localized excitons by small donors and acceptors. The shoulders at ~1.48 eV and ~1.47 eV represented the transition due to free-to-bound recombination and the defects GaAs.
Page(s): 650-656
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.50(09) [September 2012]

Files in This Item:
File Description SizeFormat 
IJPAP 50(9) 650-656.pdf272.89 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.