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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.50 [2012] >
IJPAP Vol.50(05) [May 2012] >
| Title: | Study of structural property of n-type indium antimonide thin films |
| Authors: | Vishwakarma, S R
Verma, A K
Tripathi, R S N
Das, S
Rahul |
| Keywords: | InSb thin films
Particle size
Dislocation density
Strain
Lattice parameter |
| Issue Date: | May-2012 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | In present study,
the n-type indium antimonide (InSb)
thin films of thickness 300 nm were deposited on glass substrate at room
temperature under the high vacuum ~10-5 torr using starting materials. The starting materials have been prepared
under vacuum ~10-5 torr in vacuum coating unit using indium
(99.999%) and antimony (99.999%) metal powder as source materials with various
non-stoichiometric composition as In1-xSbx (0.2 < x< 0.4). The Energy Dispersive
Analysis of X-rays (EDAX) measurement provides the information of chemical
composition (In/Sb) in thin films. X-ray diffraction studies of starting
materials and thin films confirmed the formation of InSb with polycrystallinity
and orientation of crystallites along the (111) and (220) planes. The surface
morphological study of thin films by scanning electron microscope reveals the
crystalline nature which was found to be in good agreement with the XRD
crystallinity analysis. The particle size (D),
dislocation density (δ) and strain (ε) have been evaluated using XRD
data for the starting materials and thin films. It is observed from X-ray
diffraction patterns and scanning electron micrographs that particle size,
dislocation density and strain are changing with composition ratio (In/Sb) in
starting materials and their thin films. |
| Page(s): | 339-346 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.50(05) [May 2012]
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