NISCAIR Online Periodicals Repository

NISCAIR ONLINE PERIODICALS REPOSITORY (NOPR)  >
NISCAIR PUBLICATIONS >
Research Journals >
Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.50 [2012] >
IJPAP Vol.50(05) [May 2012] >


Title: Study of structural property of n-type indium antimonide thin films
Authors: Vishwakarma, S R
Verma, A K
Tripathi, R S N
Das, S
Rahul
Keywords: InSb thin films
Particle size
Dislocation density
Strain
Lattice parameter
Issue Date: May-2012
Publisher: NISCAIR-CSIR, India
Abstract: In present study, the n-type indium antimonide (InSb) thin films of thickness 300 nm were deposited on glass substrate at room temperature under the high vacuum ~10-5 torr using starting materials. The starting materials have been prepared under vacuum ~10-5 torr in vacuum coating unit using indium (99.999%) and antimony (99.999%) metal powder as source materials with various non-stoichiometric composition as In1-xSbx (0.2 < x< 0.4). The Energy Dispersive Analysis of X-rays (EDAX) measurement provides the information of chemical composition (In/Sb) in thin films. X-ray diffraction studies of starting materials and thin films confirmed the formation of InSb with polycrystallinity and orientation of crystallites along the (111) and (220) planes. The surface morphological study of thin films by scanning electron microscope reveals the crystalline nature which was found to be in good agreement with the XRD crystallinity analysis. The particle size (D), dislocation density (δ) and strain (ε) have been evaluated using XRD data for the starting materials and thin films. It is observed from X-ray diffraction patterns and scanning electron micrographs that particle size, dislocation density and strain are changing with composition ratio (In/Sb) in starting materials and their thin films.
Page(s): 339-346
CC License:  CC Attribution-Noncommercial-No Derivative Works 2.5 India
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Source:IJPAP Vol.50(05) [May 2012]

Files in This Item:

File Description SizeFormat
IJPAP 50(5) 339-346.pdf281.3 kBAdobe PDFView/Open
 Current Page Visits: 561 
Recommend this item

 

National Knowledge Resources Consortium |  NISCAIR Website |  Contact us |  Feedback

Disclaimer: NISCAIR assumes no responsibility for the statements and opinions advanced by contributors. The editorial staff in its work of examining papers received for publication is helped, in an honorary capacity, by many distinguished engineers and scientists.

CC License Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India

Copyright © 2012 The Council of Scientific and Industrial Research, New Delhi. All rights reserved.

Powered by DSpace Copyright © 2002-2007 MIT and Hewlett-Packard | Compliant to OAI-PMH V 2.0

Home Page Total Visits: 510162 since 06-Feb-2009  Last updated on 11-Apr-2014Webmaster: nopr@niscair.res.in