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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.50 [2012] >
IJPAP Vol.50(04) [April 2012] >
| Title: | Saturated velocity model of MESFET in the presence of interface states and interfacial layer at the gate contact |
| Authors: | Chattopadhyay, P
Dutta, S |
| Keywords: | MESFET
Transconductance
Gate Contact
Structural Velocity Model |
| Issue Date: | Apr-2012 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | The saturated velocity model of a short channel MESFET has been extended by
incorporating the effects of interface states and interfacial layer at the gate
contact of the device. Simple analytical forms for the channel current, drain
conductance and transconductance of the device are derived and they are found
to be much sensitive to interface state density. The proposed model has been
applied to compare the drain characteristics of Si, SiC and GaN MESFETs. For
all three materials, the channel current has been found to decrease with drain
voltage as the field across the channel exceeds the critical field required for
velocity saturation. The decrease in the drain current yields a negative drain
conductance and transconductance with respect to drain and gate voltage,
respectively. The experimental results reported by the earlier researchers on
GaN and SiC MESFETs are considered to compare the theory with experiment over
the domain of velocity saturation. It has been found that the experimental
results can be best explained on the basis of an energy distribution of
interface states at the gate contact of both the devices. |
| Page(s): | 265-271 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.50(04) [April 2012]
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