Please use this identifier to cite or link to this item:
Title: Structural, electrical and optical characterization of CuInS2 thin films deposited by spray pyrolysis
Authors: Hussain, K M A
Podder, J
Saha, D K
Ichimura, M
Keywords: Spray Pyrolysis
Copper Indium Disulphide
X-ray Diffraction
Band Gap
Issue Date: Feb-2012
Publisher: NISCAIR-CSIR, India
Abstract: Copper indium disulphide (CuInS2) thin films have been deposited on glass substrates by varying Cu:In and S:Cu ratios using spray pyrolysis deposition. The structural, compositional and electrical characterizations of the thin films have been analyzed by Energy Dispersive X-ray Analysis (EDAX), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), dc conductivity measurement and UV-VIS-NIR Spectrophotometry. The surface morphology has beenn studied by SEM. From XRD spectrum, the fundamental peaks of CuInS2 (CIS) thin films have been identified as (112), (004)/(200), (204)/(220), (116)/(312) and (224) which indicate the chalcopyrite structure and showed an improvement of crystallinity of CuInS2 thin films for Cu:In:S ratio of 1.14:1:1.88. The temperature variation of dc conductivity showed its semiconducting nature in all the films and the highest conductivity was estimated as 11.1786 (-cm)-1 and the corresponding band gap of 1.48eV.
Description: 117-122
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.50(02) [February 2012]

Files in This Item:
File Description SizeFormat 
IJPAP 50(2) 117-122.pdf212.42 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.