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IJPAP Vol.50(02) [February 2012] >


Title: Structural, electrical and optical characterization of CuInS2 thin films deposited by spray pyrolysis
Authors: Hussain, K M A
Podder, J
Saha, D K
Ichimura, M
Keywords: Spray Pyrolysis
Copper Indium Disulphide
X-ray Diffraction
Band Gap
Issue Date: Feb-2012
Publisher: NISCAIR-CSIR, India
Abstract: Copper indium disulphide (CuInS2) thin films have been deposited on glass substrates by varying Cu:In and S:Cu ratios using spray pyrolysis deposition. The structural, compositional and electrical characterizations of the thin films have been analyzed by Energy Dispersive X-ray Analysis (EDAX), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), dc conductivity measurement and UV-VIS-NIR Spectrophotometry. The surface morphology has beenn studied by SEM. From XRD spectrum, the fundamental peaks of CuInS2 (CIS) thin films have been identified as (112), (004)/(200), (204)/(220), (116)/(312) and (224) which indicate the chalcopyrite structure and showed an improvement of crystallinity of CuInS2 thin films for Cu:In:S ratio of 1.14:1:1.88. The temperature variation of dc conductivity showed its semiconducting nature in all the films and the highest conductivity was estimated as 11.1786 (-cm)-1 and the corresponding band gap of 1.48eV.
Page(s): 117-122
CC License:  CC Attribution-Noncommercial-No Derivative Works 2.5 India
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Source:IJPAP Vol.50(02) [February 2012]

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