20-Jun-2013 10:26:17 IST
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NISCAIR ONLINE PERIODICALS REPOSITORY (NOPR) >
NISCAIR PUBLICATIONS >
Research Journals >
Indian Journal of Chemistry -Section A (IJC-A) >
IJC-A Vol.51A [2012] >
IJC-A Vol.51A(01-02) [January-February 2012] >
| Title: | Anion doped binary oxides, SnO2, TiO2 and ZnO: Fabrication procedures, fascinating properties and future prospects |
| Authors: | Nagarajan, R Kumar, Vinod Ahmad, Shahzad |
| Keywords: | Oxides Binary oxides Doping Anion doping Tin dioxide Titania Zinc oxide Photocatalysis Sensors Electrical conductivity |
| Issue Date: | Jan-2012 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Doping the oxygen in the three
technologically important binary oxides SnO2, TiO2, and
ZnO, with other anions such as nitrogen, carbon, fluorine, sulfur and chlorine
by various synthetic procedures are described. The crystal structures of these
oxides along with their electronic structures are summarized. The evolution of
many useful properties, such as efficient photocatalysis, high electrical
conductivity with high optical transparency on doping with some of these
anions, is discussed. An important milestone achieved by our research group for
the synthesis of F-doped SnO2 and ZnO powders is highlighted. Heavily
F-doped SnO2, obtained by the safe, simple, reliable and reproducible
synthetic approach developed by us is the first example among oxide
semiconductors to show Moss-Burstein effect, and consequently the defect states
are produced
in the system on injection of extra charge carriers. These trapped defect
states give rise to glow curves in the thermoluminescence spectrum. This
observation suggests the use of SnO2:F as a thermal UV sensors in
high radiation environments. In the concluding part, the need for the
investigation in to the interesting structural, electronic and optical
properties, especially in the heavily doped regime, are portrayed as part of
the future directions of research in these oxides. |
| Page(s): | 145-154 |
| CC License: | CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-0975(Online); 0376-4710(Print) |
| Source: | IJC-A Vol.51A(01-02) [January-February 2012]
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