Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/12754
Title: First principles study of electronic, elastic and lattice dynamical properties of Mg2X (X= Si, Ge and Sn) compounds
Authors: Pandit, Premlata
Sanyal, Sankar P
Keywords: Semiconductor;Electronic band structure;Phonon;Mechanical properties
Issue Date: Oct-2011
Publisher: NISCAIR-CSIR, India
Abstract: First principles pseudopotential method based on density functional theory is used to investigate the structural, electronic, elastic and phonon properties of Mg2X (X=Si, Ge, Sn) compounds at ambient pressure in antifluorite (anti-CaF2-type) structure. The calculated lattice parameters, static bulk modulus, its first order pressure derivatives and the elastic constants are compared with available experimental and other theoretical results. All the compounds have shown very small indirect band gap. The linear response method is applied to determine the phonon dispersion relations and phonon density of states. The phonon frequencies of these compounds are compared with Raman frequency to reveal small LO-TO splitting at zone center.
Page(s): 692-697
URI: http://hdl.handle.net/123456789/12754
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.49(10) [October 2011]

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