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Indian Journal of Engineering and Materials Sciences (IJEMS) >
IJEMS Vol.18 [2011] >
IJEMS Vol.18(3) [June 2011] >
| Title: | Design of harmonic noise frequency filtering down-converter with asymmetrical inductance tank in InGaP/GaAs HBT technology |
| Authors: | Wang, Cong
Kim, Nam Young |
| Keywords: | Harmonic noise frequency filtering (HNFF)
Asymmetric inductance tank (AIT)
Double balanced mixer (DBM)
Phase noise
Voltage-controlled oscillator (VCO) |
| Issue Date: | Jun-2011 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | A harmonic noise frequency filtering (HNFF) down-converter is fabricated
using asymmetric inductance tank (AIT) in InGaP/GaAs heterojunction bipolar
transistor (HBT) monolithic microwave integrated circuit (MMIC) technology. In
the voltage-controlled oscillator (VCO) design, internal inductance is found to
lower the phase noise which is based on an analytic understanding of phase
noise. This VCO directly drives the on-chip double balanced mixer (DBM) to
convert radio frequency (RF) carrier to intermediate frequency (IF) through
local oscillator (LO). Furthermore, final power performance is improved by
output amplifier. This paper presents the design for a 1.721 GHz enhanced LC
VCO, high-power DBM,
and output amplifier that have been designed to optimize phase noise and output
power. The proposed VCO exhibited a phase noise of -133.96 dBc/Hz at 1 MHz
offset and a tuning range from 1.46 GHz to 1.721 GHz. In measurement, on-chip
down-converter shows a third-order input intercept point (IIP3) of 12.55 dBm, a
third-order output intercept point (OIP3) of 21.45 dBm, an RF return loss of
-31 dB, and an IF return loss of -26 dB. The RF-IF isolation is -57 dB. Also,
the conversion gain is 8.9 dB through an output buffer. The total on-chip down-converter
is implanted in 2.56 × 1.07 mm2 of chip area. |
| Page(s): | 175-182 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1017 (Online); 0971-4588 (Print) |
| Source: | IJEMS Vol.18(3) [June 2011]
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