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|Title:||Design of harmonic noise frequency filtering down-converter with asymmetrical inductance tank in InGaP/GaAs HBT technology|
Kim, Nam Young
|Keywords:||Harmonic noise frequency filtering (HNFF);Asymmetric inductance tank (AIT);Double balanced mixer (DBM);Phase noise;Voltage-controlled oscillator (VCO)|
|Abstract:||A harmonic noise frequency filtering (HNFF) down-converter is fabricated using asymmetric inductance tank (AIT) in InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) technology. In the voltage-controlled oscillator (VCO) design, internal inductance is found to lower the phase noise which is based on an analytic understanding of phase noise. This VCO directly drives the on-chip double balanced mixer (DBM) to convert radio frequency (RF) carrier to intermediate frequency (IF) through local oscillator (LO). Furthermore, final power performance is improved by output amplifier. This paper presents the design for a 1.721 GHz enhanced LC VCO, high-power DBM, and output amplifier that have been designed to optimize phase noise and output power. The proposed VCO exhibited a phase noise of -133.96 dBc/Hz at 1 MHz offset and a tuning range from 1.46 GHz to 1.721 GHz. In measurement, on-chip down-converter shows a third-order input intercept point (IIP3) of 12.55 dBm, a third-order output intercept point (OIP3) of 21.45 dBm, an RF return loss of -31 dB, and an IF return loss of -26 dB. The RF-IF isolation is -57 dB. Also, the conversion gain is 8.9 dB through an output buffer. The total on-chip down-converter is implanted in 2.56 × 1.07 mm2 of chip area.|
|ISSN:||0975-1017 (Online); 0971-4588 (Print)|
|Appears in Collections:||IJEMS Vol.18(3) [June 2011]|
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