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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.49 [2011] >
IJPAP Vol.49(08) [August 2011] >
| Title: | Effect of Sb incorporation on the density of defect states in a-Se90In10 glassy alloy |
| Authors: | Shukla, S
Singh, S P
Kumar, S |
| Keywords: | Thin films
Chalcogenide glasses
Space charge limited conduction
Density of defect states |
| Issue Date: | Aug-2011 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | The dc conductivity of thin films of Se90In10-xSbx (where x =0, 2,
4 and 6) glassy alloys prepared by conventional rapid
melt-quenching technique at high electric fields, has been measured. Thin films of amorphous binary
and ternary chalcogenide glassy alloys of Se90In10-xSbx system are
obtained by the thermal evaporation technique of bulk material on to well
cleaned glass substrates. Current-voltage (I-V)
characteristics have been measured at various fixed temperatures. In these
samples, ohmic behaviour is observed at low electric fields. However, at high
electric fields (E~104V/cm), non-ohmic behaviour is observed.
An analysis of the experimental data confirms the presence of space charge
limited conduction (SCLC) in the glassy materials studied in the present case.
From the fitting of the data to the theory of SCLC, the density of defect
states (DOS) near Fermi level has been calculated. It is found that the DOS is
increasing with increase in concentration of Sb in pure binary Se90In10
glassy system. These results have been explained on the basis of some
structural changes with third element Sb as an impurity in the pure binary Se90In10
glassy alloy*. |
| Page(s): | 545-549 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.49(08) [August 2011]
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