Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/12458
Title: Effect of Sb incorporation on the density of defect states in a-Se90In10 glassy alloy
Authors: Shukla, S
Singh, S P
Kumar, S
Keywords: Thin films
Chalcogenide glasses
Space charge limited conduction
Density of defect states
Issue Date: Aug-2011
Publisher: NISCAIR-CSIR, India
Abstract: The <i>dc</i> conductivity of thin films of Se<sub>90</sub>In<sub>10</sub><sub>-x</sub>Sb<sub>x </sub>(where <i>x</i> =0, 2, 4 and 6) glassy alloys prepared by conventional rapid melt-quenching technique at high electric fields, has been measured. Thin films of amorphous binary and ternary chalcogenide glassy alloys of Se<sub>90</sub>In<sub>10</sub><sub>-x</sub>Sb<sub>x</sub> system<sub> </sub>are obtained by the thermal evaporation technique of bulk material on to well cleaned glass substrates. Current-voltage (<i>I</i>-<i>V</i>) characteristics have been measured at various fixed temperatures. In these samples, ohmic behaviour is observed at low electric fields. However, at high electric fields (<i>E</i>~10<sup>4</sup>V/cm), non-ohmic behaviour is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level has been calculated. It is found that the DOS is increasing with increase in concentration of Sb in pure binary Se<sub>90</sub>In<sub>10</sub> glassy system. These results have been explained on the basis of some structural changes with third element Sb as an impurity in the pure binary Se<sub>90</sub>In<sub>10</sub> glassy alloy<b style="">*</b>.
Description: 545-549
URI: http://hdl.handle.net/123456789/12458
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.49(08) [August 2011]

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