Please use this identifier to cite or link to this item:
|Title:||Role of Sn incorporation in the dielectric properties of Se75Te25 and Se85Te15 glassy alloys|
|Keywords:||Chalcogenide glasses;Dielectric measurements;Defect states|
|Abstract:||The effect of Sn incorporation in the dielectric properties of two binary Se-Te glassy systems, comparing the properties of a-Se75Te25, a-Se85Te15 and a-Se75Te15Sn10 glassy alloys, has been studied. The temperature and frequency dependence of the dielectric constants and the dielectric losses in glassy Se75Te25, Se85Te 15 and Se75Te15Sn10 alloys has been studied by measuring capacitance and dissipation factor in the frequency range 1 kHz-5 MHz and temperature range 300-350 K. A Debye like relaxation of dielectric behaviour has been observed. A detailed analysis shows that the observed dielectric loss is in agreement with the Guintini’s theory of dielectric dispersion based on two electron hopping over a potential barrier and is applicable in the present case. Dielectric constant (), dielectric loss () and loss tangent (tan), are found to be highly frequency and temperature dependent. Dependence of these dielectric parameters over the metallic impurity Sn has also been found in the present glassy system. It is observed that as well as , both decrease when Sn is incorporated in binary Se75Te25 and Se85Te15 glassy systems. The peculiar role of the third element Sn as an impurity is also discussed in terms of electronegativity difference between the elements used in making the aforesaid glassy system.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.49(07) [July 2011]|
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.