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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.49 [2011] >
IJPAP Vol.49(07) [July 2011] >
| Title: | Role of Sn incorporation in the dielectric properties of Se75Te25 and Se85Te15 glassy alloys |
| Authors: | Sharma, J
Kumar, S |
| Keywords: | Chalcogenide glasses
Dielectric measurements
Defect states |
| Issue Date: | Jul-2011 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | The effect of Sn
incorporation in the dielectric properties of two binary Se-Te glassy systems,
comparing the properties of a-Se75Te25, a-Se85Te15
and a-Se75Te15Sn10 glassy alloys, has been
studied. The temperature and frequency
dependence of the dielectric constants and the dielectric losses in glassy
Se75Te25, Se85Te
15 and Se75Te15Sn10 alloys has been
studied by measuring capacitance and dissipation factor in the frequency range
1 kHz-5 MHz and temperature range 300-350 K. A Debye like relaxation of
dielectric behaviour has been observed. A detailed analysis shows that the
observed dielectric loss is in agreement with the Guintini’s theory of
dielectric dispersion based on two electron hopping over a potential barrier
and is applicable in the present case. Dielectric constant ( ),
dielectric loss ( ) and loss tangent (tan ),
are found to be highly frequency and temperature dependent. Dependence of these
dielectric parameters over the metallic impurity Sn has also been found in the
present glassy system. It is observed that as well as , both
decrease when Sn is incorporated in binary Se75Te25 and
Se85Te15 glassy systems. The peculiar role of the third
element Sn as an impurity is also discussed in terms of electronegativity
difference between the elements used in making the aforesaid glassy system. |
| Page(s): | 483-488 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.49(07) [July 2011]
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