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dc.contributor.authorLenka, T R-
dc.contributor.authorPanda, A K-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.description.abstractA new High Electron Mobility Transistor (HEMT) model is proposed in this paper by introducing a thin AlN layer in nanoscale range into the conventional Al0.3Ga0.7N/GaN-based HEMT keeping the Al content of 30%. The AlN layer is very sensitive towards the development of polarization charges at the hetero interface and results into high 2DEG density (ns). The role of AlN layer is essentially very much suitable in order to reduce various scattering exist at the hetero interface of the conventional GaN based devices. The change of various structural parameters such as Al mole fraction of AlxGa1−xN from 0.25 to 0.45, thickness of AlGaN cap layer, thickness of AlN channel layer, doping concentrations give rise to a significant change in the 2DEG transport and C~V characteristics of the device and its detail discussion are presented in this paper. The 2DEG density with the variation of AlxGa1−xN thickness and Al mole fraction (x) are in good agreement with the experimental results from the literature.en_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.49(06) [June 2011]en_US
dc.subjectSheet resistanceen_US
dc.titleEffect of structural parameters on 2DEG density and C~V characteristics of AlxGa1−xN/AlN/GaN-based HEMTen_US
Appears in Collections:IJPAP Vol.49(06) [June 2011]

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