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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.49 [2011] >
IJPAP Vol.49(06) [June 2011] >
| Title: | Effect of structural parameters on 2DEG density and C~V characteristics of AlxGa1−xN/AlN/GaN-based HEMT |
| Authors: | Lenka, T R
Panda, A K |
| Keywords: | HEMT
2DEG
Heterostructure
Sheet resistance
Heterointerface
Nitride |
| Issue Date: | Jun-2011 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | A new High Electron
Mobility Transistor (HEMT) model is proposed in this paper by introducing a
thin AlN layer in nanoscale range into the conventional Al0.3Ga0.7N/GaN-based
HEMT keeping the Al content of 30%. The AlN layer is very sensitive towards the
development of polarization charges at the hetero interface and results into
high 2DEG density (ns). The role of AlN layer is essentially
very much suitable in order to reduce various scattering exist at the hetero
interface of the conventional GaN based devices. The change of various
structural parameters such as Al mole fraction of AlxGa1−xN from 0.25 to 0.45, thickness of AlGaN
cap layer, thickness of AlN channel layer, doping concentrations give rise to a
significant change in the 2DEG transport and C~V characteristics
of the device and its detail discussion are presented in this paper. The 2DEG
density with the variation of AlxGa1−xN thickness and Al mole fraction (x) are in good
agreement with the experimental results from the literature. |
| Page(s): | 416-422 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.49(06) [June 2011]
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