Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/11715
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dc.contributor.authorKumar, Pankaj-
dc.contributor.authorJain, Anubha-
dc.contributor.authorShukla, Manju-
dc.contributor.authorChand, Suresh-
dc.date.accessioned2011-05-23T08:59:58Z-
dc.date.available2011-05-23T08:59:58Z-
dc.date.issued2011-06-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/11715-
dc.description406-409en_US
dc.description.abstractThe space charge limited current (SCLC) in a Schottky diode with a finite injection barrier at the injecting contact and single level traps in the energy space has been investigated by mathematical modelling. Solution of coupled Poisson’s and continuity equations with non-zero Schottky barrier () leaded us to calculate the electric field [F(x)] and the charge carrier p(x) distribution in the sample. Considering the boundary conditions, the current density-voltage (J-V) characteristics have been calculated numerically. It is reported here that when Schottky barrier is not zero, J-V characteristics become Ohmic at infinitely large voltages. The expression of trap filled limit voltage (VTFL) has also been derived. The effect of Schottky barrier on the SCLC current in semiconducting devices has been studied in the present paper.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.49(06) [June 2011]en_US
dc.subjectSpace charge limited currenten_US
dc.subjectSingle level trapsen_US
dc.subjectTrap filled limiten_US
dc.subjectCharge carrier transporten_US
dc.subjectSchottky diodeen_US
dc.titleSpace charge limited current in Schottky diode with single level trapsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.49(06) [June 2011]

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