Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/10393
Title: Characterization of low pressure plasma-<i>dc</i> glow discharges (Ar, SF<sub>6</sub> and SF<sub>6</sub>/He) for Si etching
Authors: T Chiad, Bahaa
L Al-zubaydib, Thair
Khalaf, Mohammad K
I Khudiar, Ausama
Keywords: Plasma etching
Si etching
Dry etching
SF6 discharge
Glow discharge
Issue Date: Oct-2010
Publisher: NISCAIR-CSIR, India
Abstract: Low-pressure plasma reactor which is generated for SF6, SF6/He and Ar gases discharges between two metal electrodes (planer –parallel) using <i style="">dc</i>-high voltage power supply of 2 kV has been proposed. Paschen’s curves show the breakdown voltage of gases as a function of the parameter <i>p*d</i> which is the product of the pressure in the chamber (<i>P</i>=6.5´10<sup>-2</sup>-1.5´10<sup>-1 </sup>mbar) and the distance between the two electrodes (<i>d</i>=4.6 cm)<i>.</i> The minimum breakdown voltages were found 450 V at pressure of 1.35´10<sup>-1</sup>mbar and 276 V at pressure of 4.3´10<sup>-1 </sup>mbar for SF<sub>6 </sub>and Ar, respectively. Current-voltage characteristics have been studied at different values of pressure (6.5´10<sup>-2</sup>-1.5´10<sup>-1 </sup>mbar) and inter-electrodes spacing (3.4, 4.2, 4.6, 5 cm). The SF<sub>6</sub>, SF<sub>6</sub>/He and Ar gases discharges plasmas in Si etching have been discussed
Description: 723-730
URI: http://hdl.handle.net/123456789/10393
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.48(10) [October 2010]

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