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Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.48 [2010] >
IJPAP Vol.48(10) [October 2010] >
| Title: | Characterization of low pressure plasma-dc glow discharges (Ar, SF6 and SF6/He) for Si etching |
| Authors: | T Chiad, Bahaa
L Al-zubaydib, Thair
Khalaf, Mohammad K
I Khudiar, Ausama |
| Keywords: | Plasma etching
Si etching
Dry etching
SF6 discharge
Glow discharge |
| Issue Date: | Oct-2010 |
| Publisher: | NISCAIR-CSIR, India |
| Abstract: | Low-pressure
plasma reactor which is generated for SF6, SF6/He and Ar gases discharges
between two metal electrodes (planer –parallel) using dc-high voltage power supply of 2 kV has been proposed. Paschen’s
curves show the breakdown voltage of gases as a function of the parameter p*d
which is the product of the pressure in the chamber (P=6.5´10-2-1.5´10-1 mbar) and the distance between
the two electrodes (d=4.6 cm). The minimum breakdown voltages
were found 450 V at pressure of 1.35´10-1mbar and 276 V at pressure of
4.3´10-1 mbar for SF6 and
Ar, respectively. Current-voltage characteristics have been studied at
different values of pressure (6.5´10-2-1.5´10-1 mbar) and inter-electrodes
spacing (3.4, 4.2, 4.6, 5 cm). The SF6, SF6/He and Ar gases
discharges plasmas in Si etching have been discussed |
| Page(s): | 723-730 |
| CC License: |  CC Attribution-Noncommercial-No Derivative Works 2.5 India |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.48(10) [October 2010]
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