Please use this identifier to cite or link to this item:
Title: Characterization of low pressure plasma-dc glow discharges (Ar, SF6 and SF6/He) for Si etching
Authors: T Chiad, Bahaa
L Al-zubaydib, Thair
Khalaf, Mohammad K
I Khudiar, Ausama
Keywords: Plasma etching
Si etching
Dry etching
SF6 discharge
Glow discharge
Issue Date: Oct-2010
Publisher: NISCAIR-CSIR, India
Abstract: Low-pressure plasma reactor which is generated for SF6, SF6/He and Ar gases discharges between two metal electrodes (planer –parallel) using dc-high voltage power supply of 2 kV has been proposed. Paschen’s curves show the breakdown voltage of gases as a function of the parameter p*d which is the product of the pressure in the chamber (P=6.5´10-2-1.5´10-1 mbar) and the distance between the two electrodes (d=4.6 cm). The minimum breakdown voltages were found 450 V at pressure of 1.35´10-1mbar and 276 V at pressure of 4.3´10-1 mbar for SF6 and Ar, respectively. Current-voltage characteristics have been studied at different values of pressure (6.5´10-2-1.5´10-1 mbar) and inter-electrodes spacing (3.4, 4.2, 4.6, 5 cm). The SF6, SF6/He and Ar gases discharges plasmas in Si etching have been discussed
Description: 723-730
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.48(10) [October 2010]

Files in This Item:
File Description SizeFormat 
IJPAP 48(10) 723-730.pdf593.06 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.