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IJEMS Vol.17(4) [August 2010] >


Title: Preparation and studies of chemically deposited Cu4SnS4 thin films in the presence of complexing agent Na2EDTA
Authors: Kassim, Anuar
Kuang, Zulkefly
Sharif, Atan
Tee, Tan Wee
Min, Ho Soon
Nagalingam, Saravanan
Keywords: Chemical bath deposition
Semiconducting material
Solar cells
Thin films
Issue Date: Aug-2010
Publisher: CSIR
Abstract: The Cu4SnS4 thin films are deposited onto indium tin oxide glass substrate by chemical bath deposition method. The disodium ethylenediaminetetraacetic acid is used as a complexing agent during deposition process. The structural, morphological and optical properties of the deposited films have been studied using X-ray diffraction, atomic force microscopy and UV-Vis spectrophotometer, respectively. The presence of Na2EDTA promotes the deposition of better quality films. The XRD analysis shows that these films have a high crystallinity with orthorhombic structure. The AFM images indicated that these films are uniform, compact with larger grains. The absorption spectra confirmed that the thicker film has higher absorption properties. The band gap of 1.6 eV with direct transition is observed.
Page(s): 295-298
ISSN: 0975-1017 (Online); 0971-4588 (Print)
Source:IJEMS Vol.17(4) [August 2010]

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