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    <title>NISCAIR Online Periodicals Repository Collection: IJPAP Vol.42(07) [July 2004]</title>
    <link>http://nopr.niscair.res.in/handle/123456789/9014</link>
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      <title>Simultaneous effect of collimator size and absorber thickness on the gamma ray build-up factor</title>
      <link>http://nopr.niscair.res.in/handle/123456789/9606</link>
      <description>Title: Simultaneous effect of collimator size and absorber thickness on the gamma ray build-up factor
&lt;br/&gt;
&lt;br/&gt;Authors: Singh, Charanjeet; Sidhu, Gurdeep S; Kumar, Ashok; Singh, Parjit S; Mudahar, Gurmel S
&lt;br/&gt;
&lt;br/&gt;Abstract: The build-up factor values have been measured for 662 keV&#xD;
gamma rays in the extended media of bakelite and perspex under different&#xD;
collimation conditions. A correlation effect has been obtained in the measurements&#xD;
due to collimator size and absorber thickness to prevent the multiple scatter&#xD;
photons reaching the detector.
&lt;br/&gt;
&lt;br/&gt;Page(s): 475-478</description>
      <pubDate>Mon, 28 Jun 2004 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Dielectric relaxation studies of (Ge&lt;sub&gt;20&lt;/sub&gt;Se&lt;sub&gt;80&lt;/sub&gt;)&lt;sub&gt;0.90&lt;/sub&gt;Sn&lt;sub&gt;0.10&lt;/sub&gt; glassy alloy</title>
      <link>http://nopr.niscair.res.in/handle/123456789/9605</link>
      <description>Title: Dielectric relaxation studies of (Ge&lt;sub&gt;20&lt;/sub&gt;Se&lt;sub&gt;80&lt;/sub&gt;)&lt;sub&gt;0.90&lt;/sub&gt;Sn&lt;sub&gt;0.10&lt;/sub&gt; glassy alloy
&lt;br/&gt;
&lt;br/&gt;Authors: Chandel, Pradeep S; Thakur, Anup; Sharma, Vineet; Goyal, N; Tripathi, S K
&lt;br/&gt;
&lt;br/&gt;Abstract: The frequency and temperature dependence of ac conductivity&#xD;
measurements have been made on (Ge&lt;sub&gt;20&lt;/sub&gt;Se&lt;sub&gt;80&lt;/sub&gt;)&lt;sub&gt;0.90&lt;/sub&gt;Sn&lt;sub&gt;0.10&lt;/sub&gt;&#xD;
glassy alloy in the frequency range 2-50 kHz and in the temperature range&#xD;
273-373K. Dielectric constant (&lt;img src='/image/spc_char/italics_e.gif' border=0&gt;') has been calculated using this data. The results&#xD;
indicate that dielectric dispersion occurs in this temperature and frequency&#xD;
range. The dielectric loss (&lt;img src='/image/spc_char/italics_e.gif' border=0&gt;'')&#xD;
and loss angle (tan&lt;img src='/image/spc_char/delta1.gif' border=0&gt;)&#xD;
have been calculated using Gever’s relation. The temperature dependence of&#xD;
dielectric loss (&lt;img src='/image/spc_char/italics_e.gif' border=0&gt;'')&#xD;
shows relaxation peaks as a function of temperature. These relaxation peaks&#xD;
shift towards the higher temperature as the frequency is increased. A detailed&#xD;
analysis of the data shows that the results can be explained in terms of&#xD;
dipolar relaxation with a distribution of relaxation times, which is quite&#xD;
expected in case of chalcogenide glasses.
&lt;br/&gt;
&lt;br/&gt;Page(s): 539-543</description>
      <pubDate>Mon, 28 Jun 2004 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Effect of grain size on the mobility and transfer characteristics of polysilicon thin-film transistors</title>
      <link>http://nopr.niscair.res.in/handle/123456789/9604</link>
      <description>Title: Effect of grain size on the mobility and transfer characteristics of polysilicon thin-film transistors
&lt;br/&gt;
&lt;br/&gt;Authors: Gupta, Navneet; Tyagi, B P
&lt;br/&gt;
&lt;br/&gt;Abstract: The&#xD;
effect of the grain size on the effective carrier mobility (&lt;img src='/image/spc_char/micro.gif' border=0&gt;&lt;sub&gt;eff&lt;/sub&gt;) and transfer characteristics of a polycrystalline&#xD;
silicon thin-film transistor (poly-Si TFT) have been theoretically investigated&#xD;
by developing an analytical model. The dependence of &lt;img src='/image/spc_char/micro.gif' border=0&gt;&lt;sub&gt;eff&lt;/sub&gt; is studied as a function of doping concentrations and&#xD;
gate voltage for different values of grain size. It is observed that at low as&#xD;
well as at high doping concentrations, the effective carrier mobility (&lt;img src='/image/spc_char/micro.gif' border=0&gt;&lt;sub&gt;eff&lt;/sub&gt;) increases with increase in grain size, whereas the&#xD;
observed dip at the intermediate doping concentration is getting confirmed. The&#xD;
effect of the grain size on transfer characteristics of poly-Si TFT in its&#xD;
linear region is also presented. It is found that at low gate voltages, &lt;img src='/image/spc_char/micro.gif' border=0&gt;&lt;sub&gt;eff &lt;/sub&gt;and &lt;i&gt;I&lt;/i&gt;&lt;sub&gt;D &lt;/sub&gt;increase rapidly with the&#xD;
increase in &lt;i&gt;V&lt;/i&gt;&lt;sub&gt;G&lt;/sub&gt; for all values of grain sizes due to the grain boundary barrier lowering effect. At&#xD;
high gate voltage the grain boundary barrier lowering effect becomes&#xD;
insignificant and causes the saturation of &lt;img src='/image/spc_char/micro.gif' border=0&gt;&lt;sub&gt;eff &lt;/sub&gt;and &lt;i&gt;I&lt;/i&gt;&lt;sub&gt;D&lt;/sub&gt;. The model was found to account correctly for the&#xD;
experimentally observed mobility variation and yield a reasonably good&#xD;
agreement.
&lt;br/&gt;
&lt;br/&gt;Page(s): 528-532</description>
      <pubDate>Mon, 28 Jun 2004 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Crystallographic analysis of 1H, 4H-tetrahydro-8-methyl-quinolizino-(9,9a,1gh)coumarin</title>
      <link>http://nopr.niscair.res.in/handle/123456789/9603</link>
      <description>Title: Crystallographic analysis of 1H, 4H-tetrahydro-8-methyl-quinolizino-(9,9a,1gh)coumarin
&lt;br/&gt;
&lt;br/&gt;Authors: Rajnikant; Dinesh; Kamni; Sharma, Bandhan
&lt;br/&gt;
&lt;br/&gt;Abstract: The crystal structure of&#xD;
1H,4H-tetrahydro-8-methyl-quinolizino-(9,9a,1gh)coumarin (C&lt;sub&gt;16&lt;/sub&gt;H&lt;sub&gt;17&lt;/sub&gt;NO&lt;sub&gt;2&lt;/sub&gt;)&#xD;
has been determined by X-ray crystallographic techniques. The compound&#xD;
crystallizes in monoclinic space group P2&lt;sub&gt;1&lt;/sub&gt;/n with unit cell&#xD;
parameters:&#xD;
&lt;i&gt;a&lt;/i&gt; = 8.657(5) Å, &lt;i&gt;b&lt;/i&gt; = 10.251(5)&#xD;
Å, &lt;i&gt;c&lt;/i&gt; = 14.508(5) Å, &lt;img src='/image/spc_char/beta.gif' border=0&gt; = 96.61(1)°, &lt;i&gt;Z&lt;/i&gt; = 4, &lt;i&gt;V&lt;/i&gt; =&#xD;
1278.91(11) Å&lt;sup&gt;3&lt;/sup&gt;. The structure has been solved by direct methods and&#xD;
refined upto reliability index of 4.8%. The fused benzene and pyrone rings are&#xD;
planar. Both the piperidine rings exist in distorted &lt;i&gt;sofa&lt;/i&gt; conformation.&#xD;
The crystal structure is stabilized by C-H...O hydrogen bonds.
&lt;br/&gt;
&lt;br/&gt;Page(s): 524-527</description>
      <pubDate>Mon, 28 Jun 2004 22:58:59 GMT</pubDate>
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