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    <title>NISCAIR Online Periodicals Repository Collection: IJPAP Vol.43(12) [December 2005]</title>
    <link>http://nopr.niscair.res.in/handle/123456789/8749</link>
    <description />
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      <title>Study of depression of critical temperature of praseodymium doped high &lt;i&gt;T&lt;/i&gt;&lt;sub&gt;c &lt;/sub&gt;cuprates</title>
      <link>http://nopr.niscair.res.in/handle/123456789/8913</link>
      <description>Title: Study of depression of critical temperature of praseodymium doped high &lt;i&gt;T&lt;/i&gt;&lt;sub&gt;c &lt;/sub&gt;cuprates
&lt;br/&gt;
&lt;br/&gt;Authors: Gill, R; Singh, P
&lt;br/&gt;
&lt;br/&gt;Abstract: The recent experimental observation of the substitution of&#xD;
praseodymium (Pr) in high transition temperature (&lt;i style=""&gt;T&lt;/i&gt;&lt;sub&gt;c&lt;/sub&gt;) superconducting Y123 compounds gives rise to very&#xD;
interesting properties, such as monotonic decrease of &lt;i style=""&gt;T&lt;/i&gt;&lt;sub&gt;c &lt;/sub&gt;with increase in Pr concentration which is not&#xD;
satisfactorily explained yet. The depression of &lt;i style=""&gt;T&lt;/i&gt;&lt;sub&gt;c&lt;/sub&gt; is due to hole filling/hole localization, magnetic&#xD;
pair breaking or some kind of disorder/dislocation is still not clear. The&#xD;
depression of &lt;i style=""&gt;Tc &lt;/i&gt;in Y&lt;sub&gt;1-x&lt;/sub&gt;Pr&lt;sub&gt;x&#xD;
&lt;/sub&gt;Ba&lt;sub&gt;2&lt;/sub&gt;Cu&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;7-x&lt;/sub&gt; has been explained using&#xD;
magnetic pair breaking, hole filling and disorder. It has been argued that the&#xD;
disorder along with hole filling is responsible for suppression of &lt;i style=""&gt;T&lt;/i&gt;&lt;sub&gt;c&lt;/sub&gt; and subsequently to lower&#xD;
order parameter (∆).
&lt;br/&gt;
&lt;br/&gt;Page(s): 977-979</description>
      <pubDate>Mon, 28 Nov 2005 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Carbon nanotubes field effect transistors : A review</title>
      <link>http://nopr.niscair.res.in/handle/123456789/8912</link>
      <description>Title: Carbon nanotubes field effect transistors : A review
&lt;br/&gt;
&lt;br/&gt;Authors: Alvi, P A; Lal, K M; Siddiqui, M J; Naqvi, Alim H
&lt;br/&gt;
&lt;br/&gt;Abstract: Carbon&#xD;
nanotubes field effect transistors (CNTFETs) are one of the most promising&#xD;
candidates for future nanoelectronics. In this paper, the review of CNTFETs is&#xD;
presented. The structure, operation and the characteristics of carbon nanotubes&#xD;
metal-insulator-semiconductor capacitors have been discussed. The operation and&#xD;
&lt;i style=""&gt;dc&lt;/i&gt; characteristics of CNTFETs have&#xD;
been presented. In future, we expect the performance of CNTFETs will be better&#xD;
by improving CNT quality and on optimizing device structures.
&lt;br/&gt;
&lt;br/&gt;Page(s): 899-904</description>
      <pubDate>Mon, 28 Nov 2005 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Excitation energy transfer between Eu&lt;sup&gt;3+&lt;/sup&gt; and Tm&lt;sup&gt;3+&lt;/sup&gt; ions in zinc phosphate glass</title>
      <link>http://nopr.niscair.res.in/handle/123456789/8911</link>
      <description>Title: Excitation energy transfer between Eu&lt;sup&gt;3+&lt;/sup&gt; and Tm&lt;sup&gt;3+&lt;/sup&gt; ions in zinc phosphate glass
&lt;br/&gt;
&lt;br/&gt;Authors: Joshi, B C; Dhondiyal, Charu Ch
&lt;br/&gt;
&lt;br/&gt;Abstract: Non-radiative energy transfer from Eu&lt;sup&gt;3+&#xD;
&lt;/sup&gt;to Tm&lt;sup&gt;3+ &lt;/sup&gt;has been studied by observing the steady state&#xD;
emission of Eu&lt;sup&gt;3+&lt;/sup&gt; with varying concentration of Tm&lt;sup&gt;3+ &lt;/sup&gt;in&#xD;
zinc phosphate glass. It has been observed that Eu&lt;sup&gt;3+ &lt;/sup&gt;ion emission&#xD;
intensity decreases with increasing Tm&lt;sup&gt;3+&lt;/sup&gt; concentration resulting in&#xD;
a non-radiative energy transfer from Eu&lt;sup&gt;3+&lt;/sup&gt; to Tm&lt;sup&gt;3+&lt;/sup&gt; whereas&#xD;
energy transfer from Tm&lt;sup&gt;3+&lt;/sup&gt; to Eu&lt;sup&gt;3+&lt;/sup&gt; was not observed&#xD;
between donor and acceptor ions. This energy transfer has been explained on the&#xD;
basis of cross-relaxation of energy. The energy transfer mechanism and other&#xD;
parameters related to energy transfer between Eu&lt;sup&gt;3+&lt;/sup&gt; and Tm&lt;sup&gt;3+ &lt;/sup&gt;have&#xD;
been computed.
&lt;br/&gt;
&lt;br/&gt;Page(s): 918-920</description>
      <pubDate>Mon, 28 Nov 2005 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Dielectric tensor theory of electric field gradient in dilute transition metal based alloys: Application to vanadium alloys</title>
      <link>http://nopr.niscair.res.in/handle/123456789/8910</link>
      <description>Title: Dielectric tensor theory of electric field gradient in dilute transition metal based alloys: Application to vanadium alloys
&lt;br/&gt;
&lt;br/&gt;Authors: Pal, B; Singh, J
&lt;br/&gt;
&lt;br/&gt;Abstract: The electric field&#xD;
gradient (EFG) in dilute alloys consists of two contributions valence effect&#xD;
and size effect EFGs. In the estimation of valence effect EFG an electrostatic&#xD;
screening approach is used to evaluate impurity scattering potential in&#xD;
transition metal (TM) based alloys. The dielectric tensor is inverted using the&#xD;
mixed band scheme where &lt;i style=""&gt;s&lt;/i&gt;-electrons&#xD;
are represented in free electron approximation and &lt;i style=""&gt;d&lt;/i&gt;-electrons in simple tight binding approximation. In this scheme&#xD;
the exact expression is obtained for the excess impurity potential &lt;img src='/image/spc_char/delta.gif' border=0&gt;&lt;i style=""&gt;V&lt;/i&gt;(&lt;b style=""&gt;r&lt;/b&gt;) which consists of isotropic and anisotropic parts. The latter is&#xD;
the manifestation of local field (LF) effects in TM based alloys. The numerical&#xD;
results for &lt;img src='/image/spc_char/delta.gif' border=0&gt;&lt;i style=""&gt;V&lt;/i&gt;(&lt;b style=""&gt;r&lt;/b&gt;) are obtained for&#xD;
vanadium (V) alloys with Ti, Cr, Mn, Fe, Mo and W impurities using non-interacting&#xD;
model band structure. The size effect contribution to EFG is evaluated in the&#xD;
elastic continuum approach. The EFG is calculated for the above mentioned&#xD;
V-alloys including the LF effects. The calculated results for EFG are&#xD;
consistent with experimental predictions and suggest that both the valence and&#xD;
size effects are equally important to explain the experimental results.
&lt;br/&gt;
&lt;br/&gt;Page(s): 972-976</description>
      <pubDate>Mon, 28 Nov 2005 22:58:59 GMT</pubDate>
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