http://nopr.niscair.res.in/handle/123456789/8608 Search the Channel search http://nopr.niscair.res.in/simple-search http://nopr.niscair.res.in/handle/123456789/8752 Title: Study of NMR spin lattice relaxation of several aldehydes <br/> <br/>Authors: Vaish, S K; Singh, Anupam; Singh, A K; Mehrotra, N K <br/> <br/>Abstract: The NMR spin lattice relaxation of various aldehydes has been investigated.The experimental values of NMR spin lattice relaxation time <i style="">T</i>1 of benzaldehyde, anisaldehyde, <i style="">o</i>-cholorobenzaldehyde and <i style="">p</i>-hydroxybenzaldehyde have been correlated with the calculated value of N M R spin lattice relaxation time <i style="">T</i>1 obtained using various equations for dielectric relaxation time t. It has been concluded that Writz equation and Murty equation are better substitute for the correlation time in calculating NMR spin lattice relaxation time than Debye equation as used by BPP (Bloembergen, Purcell and Pound). <br/> <br/>Page(s): 295-300 Tue, 29 Mar 2005 22:58:59 GMT http://nopr.niscair.res.in/handle/123456789/8751 Title: Point contact one injection current in solid insulators with traps <br/> <br/>Authors: Sharma, N K; Anbarasan, P M <br/> <br/>Abstract: One injection current in insulator has been studied widely for a long time in various geometries. An important field for study is the analytical treatment of current carriers in deep trap region well below the fermi level. In the present problem, a cylindrical structure has been taken into consideration. The effects of traps are included in the analysis. The problem becomes complicated in the presence of traps and thermal free carriers because there are various transitions regimes present in the complete current-voltage characteristics. <br/> <br/>Page(s): 308-310 Tue, 29 Mar 2005 22:58:59 GMT http://nopr.niscair.res.in/handle/123456789/8750 Title: Novel power VDMOSFET structure with vertical floating islands and trench gate <br/> <br/>Authors: Vaid, Rakesh; Padha, Naresh <br/> <br/>Abstract: A novel power VDMOSFET (vertical double-diffused MOSFET) structure, simulated using PISCES-II, a 2-dimensional numerical device simulator has been described. The proposed device structure is based on the floating islands (FLI)-diode concept and trench gate technology. Extensive simulations were performed to understand physics of the device through various internal electrical quantities like potential distribution, electric field, etc. in different regions of the device both in on/off states.The simulation results show that the new device has a low on-resistance by virtue of reduced electric field in its drift region as well as due to the removal of parasitic JFET region resistance. Trench gate acts as a field plate to avoid the punch-through thus enhancing the breakdown voltage. For a 100 Volts design, an approximate 15% increase in the breakdown voltage has been observed in the proposed device compared to the conventional FLIMOSFET without trench gate. <br/> <br/>Page(s): 301-307 Tue, 29 Mar 2005 22:58:59 GMT http://nopr.niscair.res.in/handle/123456789/8743 Title: Effect of processing and polarizer on the electrical properties of Mn-Zn ferrites <br/> <br/>Authors: Lal, Madan; Sharma, D K; Singh, M <br/> <br/>Abstract: The effect of processing technique as well as the effect of oxidizing agent on the electrical properties of Mn_0.47Zn_0.53Fe₂O₄ ferrite has been presented. The dc resistivity is improved by citrate precursor method as compared to normal ceramic method and it is further improved by the addition of H₂O₂(hydrogen peroxide), which acts as a strong oxidizing agent. The decrease in dielectric constant and dielectric loss factor by addition of oxidizing agent is justified by inverse proportionality between resistivity and dielectric constant. <br/> <br/>Page(s): 291-294 Tue, 29 Mar 2005 22:58:59 GMT