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    <title>NISCAIR Online Periodicals Repository Collection: IJPAP Vol.44(06) [June 2006]</title>
    <link>http://nopr.niscair.res.in/handle/123456789/8221</link>
    <description />
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      <title>Variation of width of the hysteresis loop with temperature in an emitter-coupled Schmitt trigger</title>
      <link>http://nopr.niscair.res.in/handle/123456789/8326</link>
      <description>Title: Variation of width of the hysteresis loop with temperature in an emitter-coupled Schmitt trigger
&lt;br/&gt;
&lt;br/&gt;Authors: Barua, A Gohain; Tiru, Banty
&lt;br/&gt;
&lt;br/&gt;Abstract: Schmitt trigger&#xD;
circuits are designed with &lt;i style=""&gt;pnp&lt;/i&gt;&#xD;
transistors: the first circuit with two 2SB324 germanium transistors, and the&#xD;
second one with two U188 silicon transistors. At certain collector resistances&#xD;
in the second stage- or the&#xD;
driven- transistor, the variations of the&#xD;
hysteresis loop width in temperature range –95-75°&lt;sup&gt; &lt;/sup&gt;C for the first circuit, and 100-150°C for the second one have been observed. The increase in the loop&#xD;
width with temperature is shown.
&lt;br/&gt;
&lt;br/&gt;Page(s): 482-485</description>
      <pubDate>Mon, 29 May 2006 22:58:59 GMT</pubDate>
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      <title>&lt;smarttagtype namespaceuri="urn:schemas-microsoft-com:office:smarttags" name="country-region"&gt;&lt;smarttagtype namespaceuri="urn:schemas-microsoft-com:office:smarttags" name="place"&gt; Traceability of 100 kV &lt;i style=""&gt;dc &lt;/i&gt;high voltage measurements at NPL, India &lt;/smarttagtype&gt;&lt;/smarttagtype&gt;</title>
      <link>http://nopr.niscair.res.in/handle/123456789/8325</link>
      <description>Title: &lt;smarttagtype namespaceuri="urn:schemas-microsoft-com:office:smarttags" name="country-region"&gt;&lt;smarttagtype namespaceuri="urn:schemas-microsoft-com:office:smarttags" name="place"&gt; Traceability of 100 kV &lt;i style=""&gt;dc &lt;/i&gt;high voltage measurements at NPL, India &lt;/smarttagtype&gt;&lt;/smarttagtype&gt;
&lt;br/&gt;
&lt;br/&gt;Authors: Mahajan, S K; Ravat, K B; Kothari, P C
&lt;br/&gt;
&lt;br/&gt;Abstract: Recently, &lt;i style=""&gt;dc&lt;/i&gt; high voltage laboratory has been established at National&#xD;
Physical Laboratory, India (NPLI) for calibration of high voltage (HV)&#xD;
equipment. High Voltage resistive divider is the heart of &lt;i style=""&gt;dc&lt;/i&gt; high voltage measurements. The traceability of HV measurements is&#xD;
directly related to divider’s traceability to Josphson voltage standard, which&#xD;
is the primary standard of &lt;i style=""&gt;dc&lt;/i&gt;&#xD;
voltage. In-house calibration of HV divider using traceable &lt;i style=""&gt;dc&lt;/i&gt; calibrator and 10 V reference&#xD;
standard has been discussed in the present paper. The overall uncertainty of&#xD;
measurement has also been calculated and is about &#xD;
10 ppm.
&lt;br/&gt;
&lt;br/&gt;Page(s): 478-481</description>
      <pubDate>Mon, 29 May 2006 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Study of optical absorption and optical band gap determination of thin amorphous TeO&lt;sub&gt;2&lt;/sub&gt;-V&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt;-MoO&lt;sub&gt;3&lt;/sub&gt; blown films</title>
      <link>http://nopr.niscair.res.in/handle/123456789/8324</link>
      <description>Title: Study of optical absorption and optical band gap determination of thin amorphous TeO&lt;sub&gt;2&lt;/sub&gt;-V&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt;-MoO&lt;sub&gt;3&lt;/sub&gt; blown films
&lt;br/&gt;
&lt;br/&gt;Authors: Elahi, Mohammad; Souri, Dariush
&lt;br/&gt;
&lt;br/&gt;Abstract: The optical absorption coefficient of&#xD;
amorphous 40TeO&lt;sub&gt;2&lt;/sub&gt;-(60-&lt;i style=""&gt;x&lt;/i&gt;) V&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;5&lt;/sub&gt;-&lt;i style=""&gt;x&lt;/i&gt;MoO&lt;sub&gt;3&lt;/sub&gt; thin films was&#xD;
determined in a spectral range 190-1100 nm at room temperature. The fundamental&#xD;
optical absorption edge was sharp. The optical gap generally increases as the&#xD;
proportion of MoO&lt;sub&gt;3&lt;/sub&gt; in the mixed films increases. The width of the&#xD;
tail of the localized states in the band gap was determined for different&#xD;
compositions, which is because of the lack of long range order. The results of&#xD;
the usual density-of-state models of amorphous materials are presented in this&#xD;
paper.
&lt;br/&gt;
&lt;br/&gt;Page(s): 468-472</description>
      <pubDate>Mon, 29 May 2006 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Synthesis of MgB&lt;sub&gt;2&lt;/sub&gt; from magnesium rich powders</title>
      <link>http://nopr.niscair.res.in/handle/123456789/8323</link>
      <description>Title: Synthesis of MgB&lt;sub&gt;2&lt;/sub&gt; from magnesium rich powders
&lt;br/&gt;
&lt;br/&gt;Authors: Rajput, Suchitra; Chaudhary, Sujeet; Kashyap, Subhash C
&lt;br/&gt;
&lt;br/&gt;Abstract: Superconducting&#xD;
bulk MgB&lt;sub&gt;2&lt;/sub&gt; samples have been synthesized by employing a modified heat&#xD;
treatment without using any additional process steps generally undertaken in&#xD;
view of the substantial loss of Mg during sintering owing to its high vapour&#xD;
pressure at the processing temperature. Starting with Mg rich powder mixtures&#xD;
having different atomic ratios of Mg:B (as against the nominally required 1:2&#xD;
ratio), we have obtained superconducting MgB&lt;sub&gt;2&lt;/sub&gt; samples showing a&#xD;
transition temperature (&lt;i style=""&gt;T&lt;/i&gt;&lt;sub&gt;c&lt;/sub&gt;)&#xD;
in the range 40.4-40.7K when synthesized at sintering temperatures in the range&#xD;
720-900°C. Typically, a MgB&lt;sub&gt;2&lt;/sub&gt; sample&#xD;
(&lt;i style=""&gt;T&lt;/i&gt;&lt;sub&gt;c &lt;/sub&gt;= 40.5K) obtained from&#xD;
heat treating Mg and B in the ratio of 2:2 at 870°C for 1h duration exhibited critical current density in excess of 1×10&lt;sup&gt;7&lt;/sup&gt; A/m&lt;sup&gt;2&lt;/sup&gt; at ≈38K. Our results further show that MgO is not detrimental to&#xD;
superconductivity.
&lt;br/&gt;
&lt;br/&gt;Page(s): 461-467</description>
      <pubDate>Mon, 29 May 2006 22:58:59 GMT</pubDate>
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