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    <title>NISCAIR Online Periodicals Repository Collection: IJEMS Vol.16(5) [October 2009]</title>
    <link>http://nopr.niscair.res.in/handle/123456789/6243</link>
    <description />
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      <title>Critical assessment of Flory’s approach for estimating miscibility gap in binary monotectic systems</title>
      <link>http://nopr.niscair.res.in/handle/123456789/6256</link>
      <description>Title: Critical assessment of Flory’s approach for estimating miscibility gap in binary monotectic systems
&lt;br/&gt;
&lt;br/&gt;Authors: Chaubey, Sanjay
&lt;br/&gt;
&lt;br/&gt;Abstract: Flory’s  solution approach, which gives expression for&#xD;
the free energy of mixing of binary alloys whose constituent atoms differ&#xD;
largely in size, has been used to find the required model parameters in terms&#xD;
of which expressions for critical temperature (&lt;i&gt;T&lt;sub&gt;c&lt;/sub&gt;&lt;/i&gt;)  and critical&#xD;
composition  (&lt;i&gt;X&lt;sub&gt;c&lt;/sub&gt;&lt;/i&gt;) have been derived.&#xD;
Model parameters are capable of describing the thermodynamic behavior of the&#xD;
liquid phase and are useful in constructing the miscibility gap in binary&#xD;
monotectics. Within the limits fairly good agreement has been observed between&#xD;
theoretically calculated and experimentally observed values of  &lt;i&gt;X&lt;sub&gt;c&lt;/sub&gt;&lt;/i&gt;  and &lt;i&gt;T&lt;sub&gt;c&lt;/sub&gt;&lt;/i&gt;  along with the&#xD;
reasonable data for the various thermodynamic functions at the desired&#xD;
temperature in four binary monotectic systems chosen for the present study.
&lt;br/&gt;
&lt;br/&gt;Page(s): 364-366</description>
      <pubDate>Mon, 28 Sep 2009 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Charge transport and ammonia sensing response in poly (aniline-co-1-amino- 2-naphthol-4-sulphonic acid)</title>
      <link>http://nopr.niscair.res.in/handle/123456789/6255</link>
      <description>Title: Charge transport and ammonia sensing response in poly (aniline-co-1-amino- 2-naphthol-4-sulphonic acid)
&lt;br/&gt;
&lt;br/&gt;Authors: Bansal, Vineet; Bansal, M C; Dhawan, S K
&lt;br/&gt;
&lt;br/&gt;Abstract: The paper reports the synthesis of tubes of&#xD;
poly (aniline-co-1-amino-2-naphthol-4-sulphonic acid) using para toluene&#xD;
sulphonic acid as a dopant. The copolymers have the conductivity of the order&#xD;
of 0.348 S/cm to 0.198 S/cm depending on the&#xD;
ratio of the co-monomers present in the feed ratio. The morphology of the&#xD;
copolymers was studied by scanning electron microscope. Electrical conduction&#xD;
have been studied in the temperature range from 300 K to 30 K. Charge transport&#xD;
has been attributed as tunnelling in the range 30 K to 70 K. Above 70 K, charge&#xD;
transport is represented by Mott’s three-dimensional variable hopping. The&#xD;
copolymer has been found to be a better ammonia vapour sensing material and can&#xD;
be used for detection for varying concentration.
&lt;br/&gt;
&lt;br/&gt;Page(s): 355-363</description>
      <pubDate>Mon, 28 Sep 2009 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Innovative low pressure borophosphosilicate glass processes for nano devices</title>
      <link>http://nopr.niscair.res.in/handle/123456789/6254</link>
      <description>Title: Innovative low pressure borophosphosilicate glass processes for nano devices
&lt;br/&gt;
&lt;br/&gt;Authors: Jagadeesha, T; Kim, Louis; Gonsalvis, Joseph; Gowda, Thammaiah
&lt;br/&gt;
&lt;br/&gt;Abstract: Doping of oxide with phosphorous can trap&#xD;
mobile ions and reduce the re-flow temperature. By adding boron the reflow&#xD;
temperature can be reduced further without excessive phosphorous, which may&#xD;
cause metal corrosion. Borophosphosilicate glass (BPSG) and phosphosilicate&#xD;
glass (PSG) processes are mainly used for premetal dielectric (PMD)&#xD;
applications. In the present study, a new low pressure BPSG process has been&#xD;
developed which can be used for Flash memory and Logic devices. It is shown&#xD;
that films with phosphorus and boron concentrations in the range of &#xD;
1.85-9.15 elemental wt% are deposited with film thickness 6000 Å BPSG and 100&#xD;
Torr process has been found to achieve more stable film thickness. Decreasing&#xD;
the deposition pressure from 200 to 100 Torr results in a 50% increase in the&#xD;
deposition rate of twin-wafer SACVD BPSG and has zero effect on film&#xD;
properties. Throughput has been improvement by 20% on SACVD PMD BPSG&#xD;
application.
&lt;br/&gt;
&lt;br/&gt;Page(s): 341-346</description>
      <pubDate>Mon, 28 Sep 2009 22:58:59 GMT</pubDate>
    </item>
    <item>
      <title>Growth and characterization of tetravalent doped LiCoO&lt;sub&gt;2 &lt;/sub&gt;thin film cathodes</title>
      <link>http://nopr.niscair.res.in/handle/123456789/6253</link>
      <description>Title: Growth and characterization of tetravalent doped LiCoO&lt;sub&gt;2 &lt;/sub&gt;thin film cathodes
&lt;br/&gt;
&lt;br/&gt;Authors: Rao, M C; Hussain, O M
&lt;br/&gt;
&lt;br/&gt;Abstract: Titanium-doped LiCoO&lt;sub&gt;2 &lt;/sub&gt;thin films&#xD;
are grown by pulsed laser deposition technique on silicon substrates.&#xD;
Structure, AFM, FTIR and Raman are studied with respect to their deposition&#xD;
parameters, i.e., substrate temperature (&lt;i style=""&gt;T&lt;/i&gt;&lt;sub&gt;s&lt;/sub&gt;)&#xD;
and oxygen partial pressure (pO&lt;sub&gt;2&lt;/sub&gt;) in the deposition chamber. The&#xD;
films deposited in pO&lt;sub&gt;2&lt;/sub&gt; = 100 mTorr showed good crystallinity on&#xD;
silicon substrates maintained at &lt;i style=""&gt;T&lt;/i&gt;&lt;sub&gt;s&lt;/sub&gt;&#xD;
= 700°C. It is found that such a film crystallizes in the layered &lt;img src='/image/spc_char/alpha.gif'&gt;-NaFeO&lt;sub&gt;2&lt;/sub&gt; structure. The influence of&#xD;
titanium&lt;sub&gt; &lt;/sub&gt;doping on particle size and morphologies has been clearly&#xD;
studied. FTIR spectra displayed the characteristic IR&#xD;
dominant bands at 246 and 550 cm&lt;sup&gt;–1 &lt;/sup&gt;for titanium doped LiCoO&lt;sub&gt;2 &lt;/sub&gt;thin&#xD;
films. The Raman peaks observed for the films at &#xD;
594 cm&lt;sup&gt;-1&lt;/sup&gt; and 485 cm&lt;sup&gt;-1&lt;/sup&gt; are ascribed to Raman active modes&#xD;
A&lt;sub&gt;1g&lt;/sub&gt; and E&lt;sub&gt;g&lt;/sub&gt; respectively. The electrochemical&#xD;
measurements were carried out on Li//LiTi&lt;sub&gt;y&lt;/sub&gt;Co&lt;sub&gt;1-y&lt;/sub&gt;O&lt;sub&gt;2&lt;/sub&gt;&#xD;
cells. The Li//LiTi&lt;sub&gt;y&lt;/sub&gt;Co&lt;sub&gt;1-y&lt;/sub&gt;O&lt;sub&gt;2&lt;/sub&gt;&#xD;
cell delivered a specific capacity of 225 mC/&lt;img src='/image/spc_char/micro.gif'&gt;m cm&lt;sup&gt;2&lt;/sup&gt;. The influence of titanium&lt;sub&gt; &lt;/sub&gt;doping on the&#xD;
structural and electrochemical properties has been systematically studied.
&lt;br/&gt;
&lt;br/&gt;Page(s): 335-340</description>
      <pubDate>Mon, 28 Sep 2009 22:58:59 GMT</pubDate>
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