<?xml version="1.0" encoding="UTF-8"?>
<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns="http://purl.org/rss/1.0/" xmlns:taxo="http://purl.org/rss/1.0/modules/taxonomy/" xmlns:sy="http://purl.org/rss/1.0/modules/syndication/" xmlns:dc="http://purl.org/dc/elements/1.1/">
  <channel>
    <title>NISCAIR Online Periodicals Repository Collection: IJPAP Vol.48(06) [June 2010]</title>
    <link>http://nopr.niscair.res.in/handle/123456789/9039</link>
    <description />
    <items>
      <rdf:Seq>
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/9050" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/9049" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/9048" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/9047" />
      </rdf:Seq>
    </items>
  </channel>
  <textInput>
    <title>The Collection's search engine</title>
    <description>Search the Channel</description>
    <name>search</name>
    <link>http://nopr.niscair.res.in/simple-search</link>
  </textInput>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/9050">
    <title>Realisation of high &lt;i&gt;Q&lt;/i&gt; notch/allpass filter using low-voltage current conveyor</title>
    <link>http://nopr.niscair.res.in/handle/123456789/9050</link>
    <description>Title: Realisation of high &lt;i&gt;Q&lt;/i&gt; notch/allpass filter using low-voltage current conveyor
&lt;br/&gt;
&lt;br/&gt;Authors: Sharma, Susheel; Rana, Seema; Pal, K
&lt;br/&gt;
&lt;br/&gt;Abstract: A high quality&#xD;
factor (&lt;i&gt;Q&lt;/i&gt;) biquad is realized using low-voltage (±0.75 V)&#xD;
second-generation current conveyors (CCII), which can realize dual filter&#xD;
functions (notch/allpass) depending on the resistance ratio. The circuit uses&#xD;
mostly grounded components, thus, enables its easy implementation in standard CMOS technologies. The circuit offers high input resistance (10&lt;sup&gt;20&lt;/sup&gt; Ω) making&#xD;
it suitable for cascading and dissipates 3.8 mW power. The workability of this&#xD;
circuit has been&lt;b&gt; &lt;/b&gt;verified by PSpice simulations using 0.5 mm technology parameters.
&lt;br/&gt;
&lt;br/&gt;Page(s): 435-437</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/9049">
    <title>Effect of errors in position coordinates of the receiving antenna on single satellite GPS timing</title>
    <link>http://nopr.niscair.res.in/handle/123456789/9049</link>
    <description>Title: Effect of errors in position coordinates of the receiving antenna on single satellite GPS timing
&lt;br/&gt;
&lt;br/&gt;Authors: Sharma, Suman; Banerjee, P
&lt;br/&gt;
&lt;br/&gt;Abstract: &lt;smarttagtype namespaceuri="urn:schemas-microsoft-com:office:smarttags" name="country-region" downloadurl="http://www.5iantlavalamp.com/"&gt;&lt;smarttagtype namespaceuri="urn:schemas-microsoft-com:office:smarttags" name="place" downloadurl="http://www.5iantlavalamp.com/"&gt;&lt;smarttagtype namespaceuri="urn:schemas-microsoft-com:office:smarttags" name="City" downloadurl="http://www.5iamas-microsoft-com:office:smarttags"&gt;&#xD;
&#xD;
&#xD;
&#xD;
It is well&#xD;
established that the position co-ordinates of the receiving antenna should be&#xD;
determined precisely in advance for getting time of the GPS receiver through a&#xD;
single GPS satellite technique. So it is desirable to know the extent of&#xD;
accuracy of the position coordinates required for a particular timing accuracy.&#xD;
In this paper, an analytical expression relating to the position error and the&#xD;
corresponding error in the time of the GPS receiver has been derived. Time of&#xD;
the GPS receiver error caused by the error in position coordinates largely&#xD;
depends on the position of the satellite indicated by the respective elevation&#xD;
and azimuth of the satellite. To validate the derived formulation, it is&#xD;
important to configure the experimental plan judiciously. A special experiment&#xD;
has accordingly been conducted at National Physical Laboratory, New Delhi, India&#xD;
(NPLI). The observed data have been found to tally well with the derived&#xD;
relation.&#xD;
&#xD;
&lt;/smarttagtype&gt;&lt;/smarttagtype&gt;&lt;/smarttagtype&gt;
&lt;br/&gt;
&lt;br/&gt;Page(s): 429-434</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/9048">
    <title>Electrical and optical properties of polyaniline polyvinyl alcohol composite films</title>
    <link>http://nopr.niscair.res.in/handle/123456789/9048</link>
    <description>Title: Electrical and optical properties of polyaniline polyvinyl alcohol composite films
&lt;br/&gt;
&lt;br/&gt;Authors: Bhadra, J; Sarkar, D
&lt;br/&gt;
&lt;br/&gt;Abstract: Polyaniline&#xD;
polyvinyl alcohol (PANI-PVA) composite films have been prepared chemically in&#xD;
inorganic acid medium at different ratios of their monomer units. A homogeneous&#xD;
blend can be obtained even using inorganic acid medium by terminating the&#xD;
reaction soon after the mixture attains homogeneous colour change. The SEM&#xD;
pictures show that the films have well formed grains with approximate sizes&#xD;
ranging from 0.3 to 1.2 &lt;img src='/image/spc_char/micro.gif'&gt; m. The results show definite dependence of various&#xD;
parameters on the PANI-PVA ratio in the blend.&lt;b&gt; &lt;/b&gt;The XRD spectra show&#xD;
increase in crystallinity in the films with increase of PVA concentration. The&#xD;
FTIR spectra show some peaks, which ascertain chemical interlinking of PANI and&#xD;
PVA in these blends. The studies of electrical conductivity of these films&#xD;
through measurement of current-voltage &#xD;
(&lt;i&gt;I-V&lt;/i&gt;) characteristics show non-ohmic power law behaviour (&lt;i&gt;I &lt;/i&gt;a&lt;i&gt; V&lt;/i&gt;&lt;sup&gt;n&lt;/sup&gt;) with power (&lt;i&gt;n&lt;/i&gt;) lying in the&#xD;
range 0.22 to 0.88. The conductivity value of these films is found to be&#xD;
between 1.80 to 0.9 S cm&lt;sup&gt;-1&lt;/sup&gt;.
&lt;br/&gt;
&lt;br/&gt;Page(s): 425-428</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/9047">
    <title>Structural, electrical and optical behaviour of &lt;i&gt;rf&lt;/i&gt; magnetron sputtered cuprous oxide films</title>
    <link>http://nopr.niscair.res.in/handle/123456789/9047</link>
    <description>Title: Structural, electrical and optical behaviour of &lt;i&gt;rf&lt;/i&gt; magnetron sputtered cuprous oxide films
&lt;br/&gt;
&lt;br/&gt;Authors: Reddy, M Hari Prasad; Reddy, P Narayana; Uthanna, S
&lt;br/&gt;
&lt;br/&gt;Abstract: Thin films of&#xD;
cuprous oxide have been deposited on glass substrates by sputtering of copper&#xD;
target at different substrate temperatures in the range 303-523 K and at oxygen&#xD;
partial pressure of 2×10&lt;sup&gt;-2&lt;/sup&gt; Pa using &lt;i&gt;rf&lt;/i&gt; magnetron sputtering method. The deposited films&#xD;
are characterised by studying crystallographic structure with X-ray&#xD;
diffraction, surface morphology by atomic force microscopy, and electrical and&#xD;
optical properties. The effect of substrate temperature on the physical&#xD;
properties of the deposited films has been systematically studied. The films&#xD;
deposited at 303 K are found amorphous while those formed at higher&#xD;
temperatures are polycrystalline with improved crystallinity. The electrical&#xD;
resistivity of the films decreases from 29 to 8 Ω cm and optical band gap&#xD;
increases from 2.15 to 2.32 eV with the increase of substrate temperature from&#xD;
303 to 523 K.
&lt;br/&gt;
&lt;br/&gt;Page(s): 420-424</description>
  </item>
</rdf:RDF>

