http://nopr.niscair.res.in/handle/123456789/8202 Search the Channel search http://nopr.niscair.res.in/simple-search http://nopr.niscair.res.in/handle/123456789/8297 Title: Realization of voltage-mode CCII-based allpass filter and its inverse version <br/> <br/>Authors: Shah, N A; Rather, M F <br/> <br/>Abstract: A voltage-mode (VM) filter implementing first-order allpass (AP) function and its inverse signal is presented. The proposed circuit with one input and one output employs a single CCII, two resistors and one grounded capacitor. The circuit respectively implements allpass (AP) signal and its inverse function by using inverting CCII and non-inverting CCII without requiring change in the circuit topology. The phase angle is adjustable through frequency of the applied signal and/or grounded capacitor without disturbing the realizibility condition. The Personal computer simulation program with integrated circuit emphasis (PSPICE) simulation results are included. <br/> <br/>Page(s): 269-271 http://nopr.niscair.res.in/handle/123456789/8296 Title: Dielectric relaxation studies of binary mixture of pyridine and N,N-dimethylformamide in benzene solution using microwaves absorption data <br/> <br/>Authors: Kumar, Sandeep; Sharma, D R; Thakur, N; Negi, N S; Rangra, V S <br/> <br/>Abstract: The dielectric relaxation time (<i style="">t</i>) of binary mixtures of different molar concentrations of pyridine (C₅H₅N) and N,N-dimethylformamide (DMF) in benzene solution has been calculated by using standard microwave techniques and Gopala Krishna’s single frequency (9.875 GHz) concentration variational method at different temperatures (25, 30, 35 and 40°C). The solute-solute molecular associations have been proposed. The dielectric relaxation has been found to be an activated process. The energy parameters for this activated process have been calculated and compared with that of viscous flow process. <br/> <br/>Page(s): 264-268 http://nopr.niscair.res.in/handle/123456789/8295 Title: Growth and microhardness studies of mixed crystals of (NH₄)₂SbF₅-K₂SbF₅ <br/> <br/>Authors: Chacko, Elsamma; Linet, J Mary; Priya, S Mary Navis; Vesta, C; Boaz, B Milton; Das, S Jerome <br/> <br/>Abstract: Mixed crystals of (NH₄)₂SbF₅-K₂SbF_{5 ,}an electro-optic material have been grown by isothermal evaporation technique. Powder X-ray diffraction method has been used for structural identification and determination of lattice parameters. Load dependent microhardness measurements on this crystal reveal the mechanical behaviour of the material. The work hardening co-efficient and the yield strength of the material were found to be 11.66 and 2.058 Mpa, respectively. <br/> <br/>Page(s): 260-263 http://nopr.niscair.res.in/handle/123456789/8294 Title: Studies on size dependent properties of cadmium telluride thin films deposited by using successive ionic layer adsorption and reaction method <br/> <br/>Authors: Ubale, A U; Kulkarni, D K <br/> <br/>Abstract: Successive ionic layer adsorption and reaction method (SILAR) have been used to deposit CdTe thin films onto glass substrate using cadmium chloride solution as cationic and sodium tellurite solution as anionic precursor. In order to study size dependent optical, structural and electrical properties, films having different thicknesses from 96 to 312 nm have been prepared by changing SILAR deposition cycles from 50 to 110. The XRD studies show that films were nanocrystalline in nature with Wurtzite (hexagonal) structure. A shift of band gap energy from 1.86 to 1.47 eV, a decrease in electrical resistivity from 10.52 × 10¹ to 4.78 × 10¹ Wm (at 528 K), increase in grain size from 14.5 to 32.8 nm and decrease in activation energy from 0.39 to 0.19 eV have been observed when film thickness was varied from 96 to 312 nm.  The films prepared are semiconducting in nature with <i style="">p</i>-type conductivity. <br/> <br/>Page(s): 254-259