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    <title>NISCAIR Online Periodicals Repository Collection: IJPAP Vol.47(09) [September 2009]</title>
    <link>http://nopr.niscair.res.in/handle/123456789/5947</link>
    <description />
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      <rdf:Seq>
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/5971" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/5970" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/5969" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/5968" />
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  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/5971">
    <title>Effect of Ga and Zn doping on coherent transition of YBCO superconductor</title>
    <link>http://nopr.niscair.res.in/handle/123456789/5971</link>
    <description>Title: Effect of Ga and Zn doping on coherent transition of YBCO superconductor
&lt;br/&gt;
&lt;br/&gt;Authors: Mohanta, A; Behera, D
&lt;br/&gt;
&lt;br/&gt;Abstract: The simultaneous incorporation of Ga&lt;sup&gt;3+ &lt;/sup&gt;and Zn&lt;sup&gt;2+&#xD;
&lt;/sup&gt;to the Cu-site of YBa&lt;sub&gt;2&lt;/sub&gt;Cu&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;7&lt;/sub&gt;&lt;sub&gt;-δ&lt;/sub&gt; has been analyzed for&#xD;
microstructural and electrical properties. Temperature-dependent electrical&#xD;
resistivity, X-ray diffraction and SEM analysis of a set of YBa&lt;sub&gt;2&lt;/sub&gt;(Cu&lt;sub&gt;0.95&lt;/sub&gt;Zn&lt;sub&gt;0.05&lt;/sub&gt;&lt;sub&gt;-x&lt;/sub&gt;Ga&lt;sub&gt;x&lt;/sub&gt;)&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;7&lt;/sub&gt;&lt;sub&gt;-y&lt;/sub&gt; films prepared by solid state&#xD;
reaction technique have been investigated to study the substitutional effects&#xD;
of Ga and Zn at chain and plane site of Cu, respectively. The redistribution of&#xD;
charges in the superconducting system due to oxygen content and the resistance&#xD;
of the weak-links related inhomogeneities give rise to &lt;i&gt;T&lt;/i&gt;&lt;sub&gt;c&lt;i&gt;&#xD;
&lt;/i&gt;&lt;/sub&gt;degradation and dual values of exponents in the &lt;i&gt;T&lt;/i&gt;&lt;sub&gt;c0&lt;/sub&gt; region. The exponent values for fluctuation conductivity in the &lt;i&gt;T&lt;/i&gt;&lt;sub&gt;c0&lt;/sub&gt; region decrease with increase of substitution&#xD;
concentration. The dual exponent character shows that the intergranular weak&#xD;
links develop more resistance with increasing impurities.
&lt;br/&gt;
&lt;br/&gt;Page(s): 676-680</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/5970">
    <title>Electrical and optical properties of poly(aniline-co-8-anilino-1-napthalene sulphonic acid) — A material for ESD applications</title>
    <link>http://nopr.niscair.res.in/handle/123456789/5970</link>
    <description>Title: Electrical and optical properties of poly(aniline-co-8-anilino-1-napthalene sulphonic acid) — A material for ESD applications
&lt;br/&gt;
&lt;br/&gt;Authors: Bansal, Vineet; Bhandari, Hema; Bansal, M C; Dhawan, S K
&lt;br/&gt;
&lt;br/&gt;Abstract: The homopolymer of aniline (An) and its copolymer with 8-anilino-1-napthalene&#xD;
suplhonic acid (8-ANSA) was synthesized by chemical oxidative as well as&#xD;
electrochemical polymerization process in the presence of &lt;i style=""&gt;para&lt;/i&gt;-toluene sulphonic acid (PTSA) as a dopant. The spectral,&#xD;
thermal, morphological and electrochemical properties of PTSA doped polyaniline&#xD;
and its copolymer (An-co-8-ANSA) were studied and compared to elucidate the&#xD;
effect of the inclusion of &#xD;
8-ANSA in the copolymer feed. The resultant copolymer showed better solubility&#xD;
and processibility but this approach usually results in the lowering of&#xD;
conductivity, hence the ratio of aniline and 8-ANSA in the copolymer feed was&#xD;
selected to 80:20. The room&#xD;
temperature conductivity of the PTSA doped polyaniline (PANI-PTS) and poly(An-co-8-ANSA)&#xD;
in 80:20 was found to be in the order of 1.74 S/cm to 9.77×10&lt;sup&gt;-1 &lt;/sup&gt;S/cm, respectively. Conductivity mechanism of charge transport has been investigated in the&#xD;
range 30-300K. In the temperature range 30-70 K, copolymer showed tunneling&#xD;
mechanism. However, above 70 K conductivity attributes to Mott&lt;sup&gt;’&lt;/sup&gt;s&#xD;
variable range hopping (VRH) mechanism. The electrochemical&#xD;
behaviour of the polymers was studied by cyclic voltametry. The structure of&#xD;
the copolymer is characterized by &lt;sup&gt;1&lt;/sup&gt;H NMR spectroscopy, UV-visible&#xD;
and FTIR spectroscopy. Electrostatic charge dissipation (ESD) of the conducting&#xD;
copolymer blend was also studied by blending of 1% of&#xD;
PTSA doped polyaniline and poly(aniline-co-8-ANSA) with LDPE which shows a&#xD;
static decay time of 0.1 to 0.25 sec on dissipating the charge from 5000 to 500&#xD;
V.
&lt;br/&gt;
&lt;br/&gt;Page(s): 667-675</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/5969">
    <title>Pressure-volume relationships and bulk modulus for sodium halides</title>
    <link>http://nopr.niscair.res.in/handle/123456789/5969</link>
    <description>Title: Pressure-volume relationships and bulk modulus for sodium halides
&lt;br/&gt;
&lt;br/&gt;Authors: Kushwah, S S; Bhardwaj, N K
&lt;br/&gt;
&lt;br/&gt;Abstract: Equation of state for solids developed by Kushwah &lt;i&gt;et al. &lt;/i&gt;[&lt;i&gt;Physica&#xD;
B&lt;/i&gt;, 388 (2007) 20] has been used here to determine the pressure-volume&#xD;
relationships, bulk modulus and its pressure derivatives for NaF, NaCl, NaBr&#xD;
and NaI solids. The results are found to present close agreement with the&#xD;
experimental data. The results for &lt;i&gt;P, K&lt;/i&gt; and d&lt;i&gt;K&lt;/i&gt;/d&lt;i&gt;P&lt;/i&gt; at&#xD;
different compressions have been used to study the relationship between d&lt;i&gt;K&lt;/i&gt;/d&lt;i&gt;P&lt;/i&gt;&#xD;
and &lt;i&gt;P&lt;/i&gt;/&lt;i&gt;K&lt;/i&gt;.
&lt;br/&gt;
&lt;br/&gt;Page(s): 663-666</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/5968">
    <title>Fractional quantum Hall effect in graphene</title>
    <link>http://nopr.niscair.res.in/handle/123456789/5968</link>
    <description>Title: Fractional quantum Hall effect in graphene
&lt;br/&gt;
&lt;br/&gt;Authors: Sahoo, S; Das, S
&lt;br/&gt;
&lt;br/&gt;Abstract: The electrons in&#xD;
most of the conductors can be described by non-relativistic quantum mechanics&#xD;
but the electrons in graphene behave as massless relativistic particles, called&#xD;
Dirac fermions, though their speed is given by the Fermi velocity. The&#xD;
relativistic nature of the energy dispersion relation of electrons in graphene modifies&#xD;
the inter electron interactions. This results in the observation of a number of&#xD;
peculiar properties e.g. anomalous quantum Hall effect. We study the fractional&#xD;
quantum Hall effect (FQHE) in graphene. The quantized Hall conductivity in&#xD;
graphene in FQHE is shown to be:&#xD;
&lt;img src='/image/spc_char/pap_eq1.gif'&gt;,   where &lt;i style=""&gt;n&lt;/i&gt; = 0, 1, 2, 3 … &#xD;
&#xD;
This&#xD;
fascinating result shows that the FQHE in graphene has a sequence of states&#xD;
which is different from the sequence found in the 2D electron gas.
&lt;br/&gt;
&lt;br/&gt;Page(s): 658-662</description>
  </item>
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