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    <title>NISCAIR Online Periodicals Repository Collection: IJPAP Vol.49(11) [November 2011]</title>
    <link>http://nopr.niscair.res.in/handle/123456789/12933</link>
    <description />
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        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/12956" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/12955" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/12954" />
        <rdf:li resource="http://nopr.niscair.res.in/handle/123456789/12953" />
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  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/12956">
    <title>Accurate estimation of start oscillation current for maximum output power in 42 GHz, 200 kW gyrotron</title>
    <link>http://nopr.niscair.res.in/handle/123456789/12956</link>
    <description>Title: Accurate estimation of start oscillation current for maximum output power in 42 GHz, 200 kW gyrotron
&lt;br/&gt;
&lt;br/&gt;Authors: Khatun, Hasina; Rao, Reddy R; Sinha, A K; Joshi, Sri Niwas
&lt;br/&gt;
&lt;br/&gt;Abstract: Design of a 42 GHz,&#xD;
200 kW gyrotron operating at TE&lt;sub&gt;03&lt;/sub&gt; involves optimization of a guiding&#xD;
magnetic field across the tapered cavity. The start oscillation current (SOC)&#xD;
or starting current is one of the most important parameter to estimate the&#xD;
guiding magnetic field to excite the desired operating mode irrespective of&#xD;
large numbers of competitive modes. This paper presents an accurate method to estimate&#xD;
SOC, based on the linear theory, yielding the guiding magnetic field at which&#xD;
the maximum desired power level is also achieved through the beam-wave&#xD;
interaction simulation using 3D MAGIC-PIC code. The method involves&#xD;
interpretation of the beam wave interaction length as e&lt;sup&gt;-1&lt;/sup&gt; times of the normalized axial&#xD;
Gaussian electric field profile. This method is successfully applied to low&#xD;
order symmetric operating mode gyrotron. The minimum SOC from the linear theory&#xD;
for the operating mode TE&lt;sub&gt;03 &lt;/sub&gt;and the maximum power from the non-linear&#xD;
theory/code are obtained at the same guiding magnetic field 1.607 T with an&#xD;
error of 0.12% only. The paper also reports the effect of noise on SOC and&#xD;
output power, simultaneously.
&lt;br/&gt;
&lt;br/&gt;Page(s): 776-781</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/12955">
    <title>Effect of lead content on structural and &lt;i&gt;dc &lt;/i&gt;electrical conductivity of perovskite Ca&lt;sub&gt;X&lt;/sub&gt;Pb&lt;sub&gt;(1&lt;/sub&gt;&lt;sub&gt;-X)&lt;/sub&gt;TiO&lt;sub&gt;3&lt;/sub&gt; (CPT) ceramic</title>
    <link>http://nopr.niscair.res.in/handle/123456789/12955</link>
    <description>Title: Effect of lead content on structural and &lt;i&gt;dc &lt;/i&gt;electrical conductivity of perovskite Ca&lt;sub&gt;X&lt;/sub&gt;Pb&lt;sub&gt;(1&lt;/sub&gt;&lt;sub&gt;-X)&lt;/sub&gt;TiO&lt;sub&gt;3&lt;/sub&gt; (CPT) ceramic
&lt;br/&gt;
&lt;br/&gt;Authors: El-Mallah, H M
&lt;br/&gt;
&lt;br/&gt;Abstract: Ceramic compositions of complex perovskite Ca&lt;sub&gt;X&lt;/sub&gt;Pb&lt;sub&gt;(1&lt;/sub&gt;&lt;sub&gt;-&lt;/sub&gt;&lt;sub&gt;X)&lt;/sub&gt;TiO&lt;sub&gt;3&lt;/sub&gt; (CPT) systems with (x =1, 0.8, 0.7, 0.6, 0.4, 0.2 and 0) were prepared by mechanical mixing of their&#xD;
oxides (CaTiO&lt;sub&gt;3&lt;/sub&gt; and PbTiO&lt;sub&gt;3&lt;/sub&gt;). The structure of the (CPT)&#xD;
ceramics was characterized by X-ray diffraction (XRD) not only to show the&#xD;
quality of the composition, but also to determine structure of the system&#xD;
and the lattice parameters. The effect of Pb on the local structure of the&#xD;
seven ceramic samples (CPT) has been studied. The ceramics transform gradually&#xD;
from orthorhombic phase (pseudo cubic phase) to cubic phase and to tetragonal&#xD;
phase by increasing Pb content per cent. Tetragonality of PbTiO&lt;sub&gt;3&lt;/sub&gt;&#xD;
decreases with increasing Ca content and disappears at the composition Ca&lt;sub&gt;0.6&lt;/sub&gt;Pb&lt;sub&gt;0.4&lt;/sub&gt;TiO&lt;sub&gt;3&lt;/sub&gt;. The density, molar volume, atomic&#xD;
concentration and the atomic intermediate distance have been determined. The &lt;i&gt;dc.&#xD;
&lt;/i&gt;conductivity of the compositions measured in the temperature range&#xD;
303-770 K obeys Arrhenius law. Temperature dependence of conductivity revealed&#xD;
that the conductivity is thermally activated. The critical (phase transition)&#xD;
temperature &lt;i&gt;T&lt;/i&gt;&lt;sub&gt;C&lt;/sub&gt; was deduced by differential thermal analysis&#xD;
(DTA) and &lt;i&gt;dc&lt;/i&gt; conductivity data. Semiconductor-semiconductor-metal type&#xD;
for the compositions of &lt;i&gt;x&lt;/i&gt; = 1.0,&#xD;
0.8, 0.7, 0.4 and 0.2 have been observed. While semiconductor-metal behaviour was observed for the compositions Ca&lt;sub&gt;0.6&lt;/sub&gt;Pb&lt;sub&gt;0.4&lt;/sub&gt;TiO&lt;sub&gt;3&lt;/sub&gt; and&#xD;
PbTiO&lt;sub&gt;3&lt;/sub&gt; in&#xD;
the temperature range &lt;i&gt;T&lt;/i&gt;&lt;sub&gt;SM&lt;/sub&gt; = 260-370°C and 230-480°C, respectively.
&lt;br/&gt;
&lt;br/&gt;Page(s): 769-775</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/12954">
    <title>Studies on nanocrystalline ZnS thin films prepared by modified  chemical bath deposition method</title>
    <link>http://nopr.niscair.res.in/handle/123456789/12954</link>
    <description>Title: Studies on nanocrystalline ZnS thin films prepared by modified  chemical bath deposition method
&lt;br/&gt;
&lt;br/&gt;Authors: Shinde, M S; Ahirrao, P B; Patil, I J; Patil, R S
&lt;br/&gt;
&lt;br/&gt;Abstract: Nanocrystalline zinc&#xD;
sulphide (ZnS) thin films have been grown on glass surface by modified chemical&#xD;
bath deposition method (M-CBD). The optimized preparative parameters including&#xD;
temperature, &lt;i&gt;p&lt;/i&gt;H of solution, immersion time, immersion cycles, have been&#xD;
optimized for fine nanocrystalline film growth. As deposited nanocrystalline&#xD;
zinc sulphide (ZnS) thin films have been characterized for the structural,&#xD;
optical and electrical properties using X-ray diffraction (XRD), UV-Vis spectra&#xD;
and &lt;i&gt;dc&lt;/i&gt; electrical conductivity by two point probe method.
&lt;br/&gt;
&lt;br/&gt;Page(s): 765-768</description>
  </item>
  <item rdf:about="http://nopr.niscair.res.in/handle/123456789/12953">
    <title>High density plasma beam source for nitriding</title>
    <link>http://nopr.niscair.res.in/handle/123456789/12953</link>
    <description>Title: High density plasma beam source for nitriding
&lt;br/&gt;
&lt;br/&gt;Authors: Ganguli, B
&lt;br/&gt;
&lt;br/&gt;Abstract: A high density&#xD;
plasma beam source has been developed for the purpose of surface treatment and&#xD;
study of low energy ions and neutrals with surfaces. The plasma is generated by&#xD;
pulse microwave power at 2.45 GHz. A pair of Helmholtz coils is used for&#xD;
generating axial magnetic field of 436 G which is also responsible for the&#xD;
production of plasma inside a stainless steel tube of 26 mm internal diameter. The&#xD;
plasma particles follow the axial magnetic field lines and hence, form a beam&#xD;
of same diameter as the internal diameter of the SS tube. The current measured&#xD;
by an interceptor plate (negatively biased) is about 60 mA while the plasma&#xD;
density is determined to be approximately 1.1X10&lt;sup&gt;12&lt;/sup&gt; cm&lt;sup&gt;-3&lt;/sup&gt; at the center and falling off to about 1X10&lt;sup&gt;11&lt;/sup&gt; cm&lt;sup&gt;-3&lt;/sup&gt; at 1 cm away from the center. The plasma source using a mixture of&#xD;
nitrogen and hydrogen (1:2) was used successfully to nitride a sample (diameter&#xD;
16 mm) of SS201 at a low temperature of 400°C. The surface hardness achieved is rather high (1990 HV) which is&#xD;
more than five-fold increase compared to untreated surface (358 HV). The depth&#xD;
of the nitriding layer was found to be 26 microns. XRD results indicate&#xD;
efficient conversion of chromium to chromium nitride by the high plasma density&#xD;
of the present source accounting for the very efficient nitriding process.
&lt;br/&gt;
&lt;br/&gt;Page(s): 759-764</description>
  </item>
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